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Twice-heat treatment method of directionally solidified polycrystalline silicon solar cell

A heat treatment method and solar cell technology, applied in the field of solar cells, can solve the problems of low minority carrier life and reduce the minority carrier life of silicon wafers, and achieve the effects of improving efficiency, convenient application, and reducing research costs and time

Active Publication Date: 2011-06-29
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

A high concentration of oxygen impurities will reduce the minority carrier lifetime of the silicon wafer, making the minority carrier lifetime of the silicon wafer at the bottom of the silicon ingot lower than that of the middle silicon wafer

Method used

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Embodiment Construction

[0013] The embodiments of the present invention are described in detail below. This embodiment is implemented on the premise of the technical solution of the present invention, and detailed implementation methods and specific operating procedures are provided, but the protection scope of the present invention is not limited to the following implementation example.

[0014] Oxygen and carbon concentrations before and after heat treatment were measured at room temperature using a Nicolet Nexus 870 Fourier transform infrared spectrometer. Three sample silicon wafers (T1, T2, T3; M1, M2, M3; B1, B2, B3) were taken from the top, middle, and bottom of the directionally solidified polycrystalline silicon ingot for infrared spectrum measurement. The silicon wafer next to each sample in the silicon ingot is regarded as having the same oxygen and carbon content, and the silicon wafer is made into a solar cell by the following process: the surface of the silicon wafer is etched and textu...

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Abstract

The invention provides a dual heating treatment method of directionally solidified a polycrystalline silicon solar cell. The method comprises the following steps: pre-treating a silicon wafer; pre-heating and secondary heating the silicon wafer; and pickling and manufacturing a solar cell. By means of an infrared spectrum technology, a directionally solidified polycrystalline silicon ingot bottom material is pertinently selected by utilizing the characteristic that a proper quantity of precipitates formed in the process of heat treatment of oxygen can absorb and remove metal impurities, so that the aim of improving the efficiency of the polycrystalline silicon solar cell can be achieved.

Description

technical field [0001] The invention relates to a method in the technical field of solar cells, in particular to a method for two heat treatments of directional solidified polycrystalline silicon solar cells. Background technique [0002] As a low-cost material, polysilicon occupies more than 50% of the current commercial crystalline silicon solar cell market, and its photoelectric conversion efficiency is generally 14% to 17%, which is 1-2% lower than that of Czochralski monocrystalline silicon solar cells. Impurities such as oxygen and carbon in polysilicon are the main reason why the cell efficiency is lower than that of monocrystalline silicon. Although an appropriate amount of oxygen precipitation can absorb metal impurities and improve battery efficiency, excessive oxygen precipitation will induce defects and reduce the minority carrier lifetime. At the same time, high-concentration carbon will form silicon carbide precipitation, which will damage the electrical perfo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18C30B33/02
CPCY02P70/50
Inventor 沈文忠方昕
Owner SHANGHAI JIAO TONG UNIV
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