Method for preparing chalcopyrite solar cell light absorption layer and cell thereof

A technology for solar cells and light absorbing layers, which is applied in the manufacturing of circuits, electrical components, and final products, etc., can solve the problems of insufficient uniformity of the light absorbing layer, and achieve the effects of single crystal phase, improved uniformity and good crystallization.

Inactive Publication Date: 2012-11-21
BYD CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In order to solve the technical problem that the uniformity of the light-absorbing layer prepared in the prior art is not good enough, the present invention provides a method for preparing a chalcopyrite-type solar cell light-absorbing layer with further improved uniformity

Method used

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  • Method for preparing chalcopyrite solar cell light absorption layer and cell thereof
  • Method for preparing chalcopyrite solar cell light absorption layer and cell thereof
  • Method for preparing chalcopyrite solar cell light absorption layer and cell thereof

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preparation example Construction

[0036] A method for preparing a light-absorbing layer of a chalcopyrite-type solar cell, the preparation process of which is as follows image 3 As shown, it can be visualized by referring to the diagram of its preparation method, such as figure 2 shown, including the following steps:

[0037] S1: Prepare a metal pre-preparation layer 31; its material is copper indium or copper indium gallium, copper indium gallium is actually only a part of gallium replacing part of indium, and its production method is generally directly on the substrate deposited with a metal back electrode. A layer of copper indium or copper indium gallium is deposited by magnetron sputtering. The metal preset layer is also referred to as a precursor film in the art.

[0038] When the material of the metal preset layer 31 is copper indium, generally, the copper indium metal preset layer 31 is obtained by depositing a copper indium film by sputtering a copper indium target. The chalcopyrite solar cell af...

Embodiment 1

[0051] The method for preparing copper indium gallium selenide solar cells in this example: sputtering and depositing a 1.0 μm Mo back electrode layer on the soda lime glass, and then depositing a 0.5 μm CuInGa metal layer on the Mo layer by DC magnetron sputtering, and then radio frequency magnetron sputtering Deposit a 0.5μm Se layer and finally sputter deposit a 0.5μm CuInGa layer, then bake the substrate with an iodine tungsten lamp or other light sources. The temperature rise trend is: heating from room temperature to 350°C for 5 minutes and keeping the temperature at this temperature for 3 to 5 minutes. Then the temperature was raised rapidly to 500°C and kept at a constant temperature for 20 minutes to react to form a light-absorbing layer, and then the film was cooled to 350°C stepwise within 20 minutes and then naturally cooled to room temperature. The constant temperature process was carried out under a selenium atmosphere.

[0052] The crystal structure of the thin ...

Embodiment 2

[0054] The method for preparing copper indium gallium sulfur solar cells in this example: sputtering and depositing a 1.0 μm Mo back electrode layer on soda lime glass, and then depositing a 0.4 μm CuInGa metal layer on the Mo layer by DC magnetron sputtering, and then radio frequency magnetron sputtering Deposit a 0.8μm S layer and finally sputter deposit a 0.6μm CuInGa layer, then bake the substrate with an iodine tungsten lamp or other light sources. The temperature rise trend is: heating from room temperature to 350°C for 5 minutes and keeping the temperature at this temperature for 3 to 5 minutes. Then the temperature was raised rapidly to 550°C and kept at a constant temperature for 20 minutes to react to form a CIGS absorbing layer, and then the film was cooled to 350°C stepwise within 20 minutes and then naturally cooled to room temperature. The 550°C constant temperature process is all completed in a sulfur atmosphere.

[0055] The crystal structure of the thin film i...

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Abstract

The invention provides a method for preparing a chalcopyrite solar cell light absorption layer with further enhanced uniformity and a solar cell thereof to solve a technical problem in the prior art that the prepared light absorption layer has not good enough uniformity. The method for preparing chalcopyrite solar cell light absorption layer comprises the following steps of: S1, preparing a metalpreset layer; S2, forming a selenium layer or a sulfur layer or a selenium sulfur layer on the surface of the metal preset layer; S3, forming a metal preset layer on the selenium layer or the sulfur layer or the selenium sulfur layer in the step S2 to form an A / B / A sandwich -shaped intermediate product; and S4, carrying out selenylation and / or sulfurization treatment on the intermediate product. By utilizing the A / B / A sandwich-shaped structure, a layer of Se or S or a SeS layer is arranged between two metal preset layers; therefore, the internal reaction can be more sufficient in the selenylation and / or sulfurization process; the uniformity is further enhanced; the crystallization is better; and a single crystalline phase is achieved.

Description

technical field [0001] The invention belongs to the field of solar cells, in particular to the field of thin-film solar cells, especially the field of thin-film solar cells with a chalcopyrite-type light-absorbing layer. Background technique [0002] In modern society, energy is increasingly valued by people. With the gradual consumption of non-renewable resources such as oil and coal, people think that renewable resources are the main energy sources for our human beings in the future, such as wind energy, water energy, and solar energy. The existing way of using solar energy is generally to absorb light energy through semiconductor materials and store it in batteries, which are called solar cells. Solar cells currently include silicon solar cells, thin-film solar cells, and the like. [0003] Crystalline silicon solar cells are now widely used, and thin-film solar cells are increasingly familiar to people. The common compound semiconductor copper indium selenium CuInSe wit...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 刘国文钟北军马青云
Owner BYD CO LTD
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