Polycrystalline silicon carbon head material separation corrosion solution and separation method

Abstract

The invention discloses polycrystalline silicon carbon head material separation corrosion solution and a separation method, and relates to separation corrosion solution for a polycrystalline silicon carbon head material and a separation method, a separation method for treating a carbon head material produced by a vapor deposition method and preparation of the separation corrosion solution. The separation corrosion solution is characterized by comprising the following components in part by weight: 55 to 97 parts of high-purity sulfuric acid solution, 2 to 30 parts of potassium permanganate and 1 to 15 parts of sodium salt. The separation method is characterized by comprising the following steps of: 1, mixing and stirring 55 to 97 weight parts of high-purity sulfuric acid solution, 2 to 30 weight parts of potassium permanganate and 1 to 15 weight parts of sodium salt to form mixed solution; 2, soaking the carbon head material into the mixed solution for 1.5 to 16 hours; 3, taking out and cleaning the carbon head material, and cleaning the surface of the carbon head material by using cleaning solution containing nitric acid and hydrofluoric acid in a weight ratio of 5:1 for 1 to 3 minutes; and 4, cleaning the treated material by using pure water and ultrasonic wave, and drying the material.

Description

technical field [0001] The invention relates to a separation corrosion liquid and separation method for graphite and polysilicon material. In particular, it relates to a method for preparing and separating an etching solution for separating silicon material and graphite material in polysilicon material produced by gas-phase deposition reaction. Background technique [0002] With the rapid development of modernization, especially the rapid development of photovoltaic industry and electronic information industry, my country's polysilicon production enterprises are blooming everywhere. By 2012, the national production capacity will reach 98,000 tons. The material and the graphite card flap are connected together and are difficult to separate, commonly known as "carbon head material". Since the silicon-carbon surface is very tightly combined, it cannot be used directly and is treated as waste, resulting in a huge waste of resources. At present, the method of manually knocking o...

AI Technical Summary

Problems solved by technology

However, since silicon and carbon have many similar physical and chemical properties, even if the polysilicon material in the "carbon head" that is not in contact with graphite is manually knocked out for use, the carbon content in it is still high, which seriously affects the quality of polysilicon; It will also bring some extra impurities, and it cannot guarantee that the impurities on the surface of the silicon material will be completely removed.