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Method of manufacturing dislocation-free single-crystal silicon by Czochralski method

A single crystal silicon and dislocation technology, which is applied in the field of manufacturing dislocation-free single crystal silicon, can solve problems such as the difficulty in growing large-diameter single crystals, and achieve the effect of reducing dislocations and increasing yield

Inactive Publication Date: 2011-08-10
SILTRONIC AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, as the diameter of silicon wafers has increased in recent years, it has become increasingly difficult to grow large-diameter single crystals in a dislocation-free manner for various reasons, thus becoming a major issue in terms of yield and cost of fabrication. important question

Method used

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  • Method of manufacturing dislocation-free single-crystal silicon by Czochralski method
  • Method of manufacturing dislocation-free single-crystal silicon by Czochralski method
  • Method of manufacturing dislocation-free single-crystal silicon by Czochralski method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] The bag of raw polysilicon is unsealed and the silicon is loaded into the basket. Then, washing was performed with ultrapure water for 5 minutes by using a washing device. In this case, wash with overflowing ultrapure water. Also, shake the raw silicon. After washing, the baskets were removed and rinsed with ultrapure water. After subsequent drying, the following raw silicon was obtained.

[0034] If a single crystal ingot is manufactured using this raw material silicon, the remelting time can be shortened by 21%.

Embodiment 2

[0036] The bag of raw polysilicon is unsealed and the silicon is loaded into the basket. Then, air blowing is performed by using compressed air. After air blowing, the following raw silicon was obtained.

[0037]If a single crystal ingot is manufactured using this raw material silicon, the remelting time can be shortened by 33%.

Embodiment 3

[0039] After placing the raw material polysilicon on a sieve with a mesh size of 3 mm×3 mm, shaking and removing fine particles, the following raw material silicon was obtained.

[0040] If a single crystal ingot is manufactured using this raw material silicon, the remelting time can be shortened by 42%.

[0041] In the particle size distribution of fine particles collected in Example 3, fine particles with an average particle size of less than 250 μm accounted for more than 90% of all fine particles. Therefore, fine particles with an average particle diameter of less than 250 μm can be selectively removed. figure 1 Shown is a particle size distribution graph of the collected fine particles. In other Examples, because a basket or the like having holes corresponding to the meshes of the sieve of Example 3 was used, fine particles having an average particle diameter of 250 μm or less could also be removed.

[0042] figure 2 Shown is a comparative graph of the remelting time ...

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Abstract

To provide a method of manufacturing dislocation-free single-crystal silicon by the Czochralski method. The method according to the present invention is characterized in that silicon, which does not contain particles with an average particle diameter smaller than 250 [mu]m, is used as raw material for melting.

Description

technical field [0001] The present invention relates to a method for producing dislocation-free single crystal silicon by the Czochralski method. Background technique [0002] In the technical field of silicon wafers, generally, a technique of producing single crystal silicon by the Czochralski method is widely used. In general, the Czochralski method is a method in which a quartz crucible is filled with polycrystalline silicon as a raw material, the polycrystalline silicon is heated and melted, and a single crystal having a predetermined shape is grown and pulled by using a seed crystal. Here, maintaining a dislocation-free state during growth is an important issue in single crystal growth. However, as the diameter of silicon wafers has increased in recent years, it has become increasingly difficult to grow large-diameter single crystals in a dislocation-free manner for various reasons, thus becoming a major issue in terms of yield and cost of fabrication. important quest...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/00C30B29/06
CPCC30B29/06C30B15/02C30B15/00H01L21/02
Inventor 福田真行福田淳福田善友
Owner SILTRONIC AG
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