Diffusion method for preparing emitting electrode of polycrystalline silicon solar battery

A technology of solar cells and diffusion methods, applied in the field of polycrystalline silicon solar cells, can solve problems such as limited optimization degree and difficulty in changing doping curves, and achieve the effects of improving cell efficiency, improving minority carrier lifetime, and improving open-circuit voltage and short-circuit current.

Active Publication Date: 2011-08-10
ZHEJIANG JINKO SOLAR CO LTD
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Problems solved by technology

It is difficult to change the doping curve inside the silicon wafer simply by cha...

Method used

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  • Diffusion method for preparing emitting electrode of polycrystalline silicon solar battery
  • Diffusion method for preparing emitting electrode of polycrystalline silicon solar battery
  • Diffusion method for preparing emitting electrode of polycrystalline silicon solar battery

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Embodiment 1

[0034] Embodiment 1: A method for preparing a polycrystalline silicon solar cell emitter by double diffusion.

[0035] The polycrystalline 156×156 silicon wafer after cleaning and texturing is diffused using a tubular diffusion furnace. At a temperature of 830°C, a 10-min pre-oxidation is first performed with an oxygen ratio of 10%. Then carry out the first active diffusion for 10min, with a small N ratio of 10%. The temperature is raised to 860 degrees, and the temperature rise rate is 5°C / min. The temperature rise process is also the first redistribution of impurities. The second active diffusion was carried out for 20 min, and the small N ratio was 10%. Finally, the second impurity redistribution process was carried out for 5 minutes, and the oxygen ratio was 10%. Finally, cool down and take out the diffused silicon wafer. Specific process such as image 3 shown. After using the diffusion process twice in this embodiment, and making cells through the subsequent proces...

Embodiment 2

[0036] Embodiment 2: A method for preparing an emitter of a polycrystalline silicon solar cell by three-time diffusion.

[0037]The polycrystalline 156×156 silicon wafer after cleaning and texturing is diffused using a tubular diffusion furnace. At a temperature of 820°C, a pre-oxidation process was first performed for 5 minutes with an oxygen ratio of 10%. Then carry out the first active diffusion for 10min, with a small N ratio of 10%. Raise the temperature to 840°C with a heating rate of 5°C / min. The heating process is also the first redistribution of impurities. The second active diffusion is carried out for 10 min, and the small N ratio is 10%. Then it is raised to 860°C with a heating rate of 5°C / min. The heating process is also the second impurity redistribution. Carry out the third active diffusion for 10 min, and the proportion of small N is 10%. Then carry out the third impurity redistribution process at 860 degrees for 5 minutes, and the oxygen ratio is 10%. Fi...

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Abstract

The invention discloses a diffusion method for preparing an emitting electrode of a polycrystalline silicon solar battery. The diffusion method comprises the following steps: mainly adopting a liquid-state POCl3 phosphorus source and using a high-concentration doped diffusion technology to achieve the purpose of improving the silicon battery performance by improving a phosphorus distribution curve of the emitting electrode. A multiple through-source diffusion method comprises the following steps: after carrying out preoxidation on a silicon wafer, first active diffusion is carried out on the silicon wafer at a lower temperature; and then second active diffusion is carried out at a high temperature; or third active diffusion is carried out at a higher temperature. Compared with the primary active diffusion, the method can improve the efficiency in the condition that the cost is not increased.

Description

technical field [0001] The invention belongs to the technical field of polycrystalline silicon solar cells, in particular to a method for preparing a polycrystalline silicon solar cell emitter. Background technique [0002] Crystalline silicon cells use the photovoltaic effect of the P-N junction to realize light-to-electricity conversion. Due to its long service life, low carbon and environmental protection, it will become a representative new energy source in the future. The main process flow of the current commercial crystalline silicon cell is: silicon wafer surface cleaning and damage layer removal, surface anti-reflection texture formation → formation of P-N junction by diffusion method → ​​edge junction and PSG removal → surface anti-reflection film deposition And passivation → printing of back electrode, aluminum back field and front electrode → use sintering to form a good ohmic contact between electrode and silicon wafer → test and inspection. Due to its simple p...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 汤安民梅晓东石峰军姜平董艳辉
Owner ZHEJIANG JINKO SOLAR CO LTD
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