Preparation method for resonant cavity of far infrared detector

A detector, far-infrared technology, used in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems such as limited quantum efficiency, no top mirror, and insufficient bottom mirror reflectivity, achieving quantum The effect of improving efficiency and improving response rate

Inactive Publication Date: 2011-08-10
SHANGHAI JIAO TONG UNIV
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Problems solved by technology

This resonant cavity structure effectively improves the quantum efficiency, but the further improvement of the quantum efficiency is limited due to the insufficient reflectivity of the bottom reflector.
According to further retrieval, M.M.Zheng, Y.H.Zhang et al proposed a method to optimize the detector main cavity structure in J.Appl.Phys. (Journal of Applied Physics) Volume 105 (2009) No. 084515, and used The higher reflectivity of the gold layer bottom reflector further improves the quantum efficiency of this optimized detector, but the further improvement of its quantum efficiency is limited due to the absence of a matching top reflector

Method used

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Embodiment Construction

[0014] The embodiments of the present invention are described in detail below. This embodiment is implemented on the premise of the technical solution of the present invention, and detailed implementation methods and specific operating procedures are provided, but the protection scope of the present invention is not limited to the following implementation example.

[0015] This embodiment includes the following steps:

[0016] (1) Determine that the detector type to be grown is a detector for light emission within the n-type gallium arsenide homojunction work function, which is composed of multi-period alternating doped emission layers and non-doped intrinsic layers; determine The bottom mirror to be grown is composed of highly doped GaAs bottom electrode layer, undoped GaAs layer, and Au metal layer (refractive index 152+329i); the top mirror is intrinsic GaAs Layers of an inverted pyramid structure of material (refractive index 3.68). This embodiment is to improve the tota...

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Abstract

The invention provides a preparation method for a resonant cavity of a far infrared detector in the technical field of semiconductor detectors. The method comprises the steps of determining a light-emitting far infrared detector in a homojunction work function as well as structure and material parameters, optimizing bottom reflector parameters and optimizing top reflector parameters according to the optimized bottom reflector parameters; and reinforcing a main body structure of the far infrared detector and a bottom reflector through epitaxial growth resonance of a molecular beam, corroding a periodic pyramid structure through a method of adding a sacrificial layer and obtaining a top reflector with an inverted pyramid structure by combining a method of inverted installation. The method overcomes the defects of low quantum efficiency of the far infrared detector and greatly improves the quantum efficiency of the detector.

Description

technical field [0001] The invention relates to a method in the technical field of semiconductor detectors, in particular to a method for preparing a resonant cavity of a far-infrared detector. Background technique [0002] Infrared detectors have broad application prospects in the research of infrared physics and new material exploration. One of the main goals of its development is to expand the detection range of detectors and improve device performance. The development of high-performance far-infrared detectors is the need of astrophysics and new material research. In recent years, the concept of far-infrared detection (HIWIP) with a homogeneous junction internal emission work function has been proposed and realized, which has greatly enriched and developed this field. Its outstanding advantage is that the cut-off wavelength can be extended without limit in principle and the detector can be integrated with the existing gallium arsenide (GaAs) or silicon (Si) material tec...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0232
CPCY02P70/50
Inventor 邓国贵张月蘅沈文忠
Owner SHANGHAI JIAO TONG UNIV
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