SiC-based MOSFET (metal-oxide -semiconductor field effect transistor) oxysensible sensor for automobile engine
A technology of automobile engine and oxygen sensor, applied in the field of oxygen sensor, can solve the problems of inability to meet the requirements of sensor miniaturization, integration and network control, complicated device, troublesome use and maintenance, etc., to achieve long-term stable operation, Improve reliability and consistency, reduce weight and volume
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[0022] The oxygen sensor of the automobile engine based on MOSFET of the present invention adopts silicon carbide SiC as the substrate material, and can realize the requirement of working under high temperature.
[0023] As shown in Table 1, compared with other semiconductor materials, silicon carbide has good characteristics such as large band gap, high breakdown electric field, high electron saturation drift velocity, and high thermal conductivity, so it can be used under high temperature, high pressure, high frequency and other conditions. normal work. In addition, silicon carbide high-temperature devices can work stably without cooling continuously at 300-600°C, eliminating the requirement for cooling systems (such as liquid cooling systems), greatly reducing weight and increasing work reliability. Increased fuel efficiency, reduced pollution, and weight savings bring enormous economic and environmental benefits.
[0024] Table 1 Comparison of relevant parameters of sever...
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