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Mask blank substrate

A mask and substrate technology, which is applied to the original parts, instruments, and electrical components for opto-mechanical processing, and can solve the problems of deformation force applied to the substrate and the deterioration of the coincidence accuracy.

Active Publication Date: 2011-09-14
HOYA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the surface film is attached to the film with the transfer pattern formed, deformation force is also applied to the substrate
At this time, if the substrate deformation tendency of each photomask is different, the misalignment of the pattern on each substrate will also show a different tendency, resulting in a significant deterioration of the overlay accuracy.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0100] Next, Example 1 performed to clarify the effects of the present invention will be described.

[0101] A rough polishing process was performed on the glass substrate subjected to polishing and chamfering of the synthetic quartz glass substrate under the following polishing conditions. After the rough polishing step, ultrasonic cleaning was performed on the glass substrate in order to remove abrasive grains adhering to the glass substrate. Among them, polishing conditions such as processing pressure, each rotation speed of the upper and lower fixed disks, and polishing time are appropriately adjusted.

[0102] Grinding liquid: cerium oxide (average particle diameter 2μm~3μm) + water

[0103] Grinding disc (pad): hard grinding disc (urethane disc)

[0104] Next, a fine polishing process was performed on the roughly polished glass substrate under the following polishing conditions. After the precision polishing step, ultrasonic cleaning was performed on the glass substra...

Embodiment 2

[0117] The precision polishing and the ultraprecision polishing process were performed similarly to Example 1, and several glass substrates were obtained. The flatness and symmetry of the main surface of the glass substrate thus obtained were investigated by a wavelength shifting interferometer using a wavelength-modulated laser. In order to investigate the flatness and symmetry of the main surface, first, (1) for the main surface on the side where the thin film for forming the transfer pattern is provided in the square substrate after the predetermined polishing, set parallel to the left and right end surfaces and equal The distance between the first axis of symmetry and the second axis of symmetry parallel to and equidistant from the upper and lower end surfaces, in the area within a 132 mm square of the above-mentioned main surface, with the above-mentioned first symmetry axis and the above-mentioned second symmetry axis as reference, according to A virtual grid was set at ...

Embodiment 3

[0123] The precision grinding|polishing and ultraprecision grinding|polishing process were performed similarly to Example 1, and several glass substrates were obtained. The flatness and symmetry of the main surface of the glass substrate thus obtained were investigated by a wavelength shifting interferometer using a wavelength-modulated laser. In order to investigate the flatness and symmetry of the main surface, first, (1) for the main surface on the side where the thin film for forming the transfer pattern is provided in the square substrate after the predetermined polishing, set parallel to the left and right end surfaces and equal The distance between the first axis of symmetry and the second axis of symmetry parallel to and equidistant from the upper and lower end surfaces, in the area within a 142 mm square of the above-mentioned main surface, with the above-mentioned first symmetry axis and the above-mentioned second symmetry axis as reference, according to A virtual gr...

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Abstract

Provided is a mask blank substrate that can significantly reduce positional offset caused by a photomask, and can also significantly reduce the tendency for substrate deformation difference before and after chucking for each photomask, by reducing flatness variation on a main surface before and after chucking. With the mask blank substrate having two main surfaces and four end surfaces, the center point is set on the main surface, and first and second symmetric axes are set such that the first symmetric axis parallel to one of the end surfaces passes through the center point, and the second symmetric axis orthogonal to the first symmetric axis also passes through the center point. Measuring points are set in the shape of a grid based on the first and second symmetric axes, the heights of the main surfaces from a reference surface are measured at the respective measuring points, and the difference between the measured heights between the measuring points that are arranged axisymmetrically with respect to the first symmetric axis are calculated. The mask blank substrate is characterized in that the difference in the calculated height measurement values corresponding to at least 95% of the total number of measured values does not exceed a predetermined value.

Description

technical field [0001] The present invention relates to a substrate for a mask blank for a photomask used in a photolithography process. Background technique [0002] A photomask is used in a photolithography process in a semiconductor manufacturing process. As the miniaturization of semiconductor devices progresses, the demand for miniaturization in this photolithography process is increasing. In particular, exposure devices using ArF exposure light (193nm) have been developed to achieve higher NA in order to cope with miniaturization, and further developments have been made to achieve higher NA by introducing liquid immersion exposure technology. In order to meet the demand for such miniaturization and high NA, it is required to increase the flatness of the photomask. That is, as the miniaturization based on the pattern line width progresses, the allowable amount of misalignment of the transfer pattern due to flatness becomes smaller, and the focus margin in the photolit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/14C03C17/36H01L21/027B24B37/04G03F1/00G03F1/60
CPCB24B37/042G03F1/60G03F7/20C03C19/00G03F1/14G03F1/50B24B1/005C03C17/3602G03F1/38G03F1/62H01L21/0337
Inventor 佐佐木达也宫崎贵裕
Owner HOYA CORP