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Resist pattern coating agent and resist pattern forming method using same

A technology of resist pattern and coating agent, applied in the field of resist pattern formation and resist pattern coating agent, can solve the problems of reduced focus depth, high-priced exposure device, etc., and achieve the effect of simple and efficient formation

Inactive Publication Date: 2011-09-14
JSR CORPORATIOON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, to shorten the wavelength of the light source, a new and expensive exposure device is required
In addition, there is a trade-off between the resolution and the depth of focus in increasing the NA of the lens, so even if the resolution is increased, the depth of focus will decrease.

Method used

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  • Resist pattern coating agent and resist pattern forming method using same
  • Resist pattern coating agent and resist pattern forming method using same
  • Resist pattern coating agent and resist pattern forming method using same

Examples

Experimental program
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Embodiment

[0238] The present invention will be specifically described below based on examples, but the present invention is not limited by these examples. In addition, "part" and "%" in an Example and a comparative example are a mass standard unless otherwise indicated. In addition, the measurement methods of various physical property values ​​and the evaluation methods of each characteristic are shown below.

[0239] [Weight-average molecular weight (Mw) and number-average molecular weight (Mn)]: GPC columns manufactured by Tosoh Corporation (trade name "G2000HXL" two, trade name "G3000HXL" one, trade name "G4000HXL" one), Under the analytical conditions of flow rate: 1.0 mL / min, dissolution solvent: tetrahydrofuran, and column temperature: 40° C., it was measured by gel permeation chromatography (GPC) using monodisperse polystyrene as a standard. In addition, the degree of dispersion (Mw / Mn) was calculated from the measurement results of Mw and Mn.

[0240] [Residual ratio of low-mo...

Synthetic example 1

[0246] (Synthesis Example 1: Polymer (A-1))

[0247]Compound 53.93g (50mol%) shown in formula (L-1), compound 10.69g (10mol%) shown in formula (L-2) and compound 35.38g (40mol%) shown in formula (L-3) ) was dissolved in 200 g of 2-butanone, and 5.58 g of azobisisobutyronitrile (hereinafter referred to as "AIBN") was further added to prepare a monomer solution. A 1,000-mL three-necked flask charged with 100 g of 2-butanone was purged with nitrogen for 30 minutes, then heated to 80° C. while stirring, and the prepared monomer solution was added dropwise over 3 hours using a dropping funnel. The start of the dropwise addition was recorded as the polymerization start time, and the polymerization reaction was carried out for 6 hours. After the polymerization reaction was completed, the polymerization solution was water-cooled to below 30° C., then dropped into 2000 g of methanol, and the precipitated white powder was separated by filtration. The white powder separated by filtrati...

Synthetic example 2

[0249] (Synthesis Example 2: Polymer (A-2))

[0250] Instead of the compound represented by the formula (L-2), 39.14 g (37 mol%) of the compound represented by the formula (L-4) was used, and 50.16 g (50 mol%) of the compound represented by the formula (L-1) and A polymer (A-2) (78 g, yield 78%) was obtained in the same manner as in Synthesis Example 1 except that 10.70 g (13 mol%) of the compound represented by the formula (L-3) was used. The Mw of the obtained polymer (A-2) was 5,200, Mw / Mn was 1.62, and the remaining ratio of low molecular weight components was 0.03%. also, 13 As a result of C-NMR analysis, it has a repeating unit represented by formula (A-2), and the content ratio (mol ratio) of each repeating unit is a / b / c=50.0 / 37.0 / 13.0. The polymer (A-2) is referred to as a resin (A-2) having an acid dissociative group.

[0251]

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Abstract

A resist pattern coating agent which contains a resin having a hydroxy group, and a solvent containing not less than 30% by mass of a branched alkyl alcohol having 3-10 carbon atoms. The resist pattern coating agent is used in the step (2) of a resist pattern forming method which comprises: a step (1) wherein a first resist pattern is formed on a substrate using a first radiation-sensitive resin composition; a step (2) wherein the first resist pattern is processed with a resist pattern coating agent; and a step (3) wherein a second resist pattern is formed on the substrate, which has been processed with the resist pattern coating agent, using a second radiation-sensitive resin composition.

Description

technical field [0001] The present invention relates to a resist pattern coating agent and a resist pattern forming method using the same, and more particularly, relates to the ability to suppress LWR (line width fluctuation) and top loss (film reduction of resist pattern) at the time of pattern formation A resist pattern coating agent and a resist pattern forming method capable of forming a finer resist pattern simply and efficiently. Background technique [0002] In the field of microfabrication represented by the manufacture of integrated circuit elements, in order to obtain a higher degree of integration, recently, lithography technology capable of microfabrication at a level of 0.10 μm or less has become necessary. In the conventional lithography process, near-ultraviolet radiation such as i-rays is generally used as radiation, but it is said that microfabrication on the submicron level is extremely difficult for this near-ultraviolet rays. Therefore, in order to enabl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/40H01L21/027
CPCG03F7/40G03F7/0035H01L21/0273G03F7/0037H01L21/0275
Inventor 矢田勇二庵野祐亮柿泽友洋堀雅史三田伦广若松刚史
Owner JSR CORPORATIOON