Method for preparing bunchy bismuth nanostructure material

A nanostructure and structural material technology, applied in the field of preparing bundled bismuth nanostructure materials, can solve the problems of inability to control a single size of a large area, inaccurate control of deposition time, low filling rate of filled nanowires, etc. Strong controllability and good periodicity

Inactive Publication Date: 2011-10-19
EAST CHINA NORMAL UNIVERSITY
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  • Claims
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Problems solved by technology

At present, the preparation of bismuth nanowire arrays through alumina templates is mainly through single pulse current deposition or direct current electrodeposition. These single electrodeposition methods lead to a single nanostructure and low controllability.
The filling rate of fille

Method used

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  • Method for preparing bunchy bismuth nanostructure material
  • Method for preparing bunchy bismuth nanostructure material
  • Method for preparing bunchy bismuth nanostructure material

Examples

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Embodiment 1

[0021] Preparation of bismuth beam nanostructure material, the specific steps are as follows:

[0022] a) Cut the alumina template into small pieces of 1cm×2cm, and then ultrasonically clean them in alcohol solution.

[0023] b) Prepare an electrodeposition solution consisting of 10 g / l BiCl 3 , 50g / l tartaric acid, 95g / l glycerol and 50g / l NaCl solution, the pH of the solution was adjusted to 0.9 with dilute hydrochloric acid.

[0024] c) Use CH1660C electrochemical workstation to conduct electrodeposition on alumina template, stage 1: at high level 1.5v, duration 0.4ms (milliseconds); low level 0v, duration 0.8ms (milliseconds), pulse under the above conditions Deposition for 40min (minutes). Stage 2: 2.5V DC electrodeposition for 1h (hour). Close the electrochemical deposition software to end the deposition.

[0025] d) After the electrodeposition is completed, the template is taken out, placed in deionized water, ultrasonically cleaned, then placed in NaOH (0.5 mol / l) ...

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Abstract

The invention discloses a method for preparing a bunchy bismuth nanostructure material, which comprises the following steps: performing ultrasonic cleaning of an alumina AAO template in an alcohol solution, performing electrodeposition by multi-potential step, and removing the alumina membrane so as to obtain the bunchy bismuth nanostructure material. The invention has simple preparation and high filling ratio. The invention also discloses the prepared bunchy bismuth nanostructure material which has a unique high-density nano-wire array structure, can receive various heat energy from the environment, and has wide commercial application perspectives.

Description

technical field [0001] The invention relates to the preparation of thermoelectric materials and semiconductor materials, in particular to a method for preparing beam-like bismuth nanostructure materials. Background technique [0002] Bismuth is a typical semimetal material. Due to its characteristics such as highly anisotropic Fermi surface, very small electronic effective mass, large carrier mean free path and semimetal-semiconductor transition, it is widely used in thermoelectric, sensor and giant magnetic fields. Resistors and other fields have extremely broad application prospects. Theoretical research shows that due to the quantum confinement effect, the thermoelectric performance of bismuth will be significantly improved with the reduction of the material dimension. In addition, with the change of nanowire diameter and orientation, the electrical transport and thermoelectric properties of bismuth will be significantly different. Therefore, it is very important to exp...

Claims

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Application Information

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IPC IPC(8): C25D3/54
Inventor 张志朱自强郁可白丹
Owner EAST CHINA NORMAL UNIVERSITY
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