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Thermosetting die bond film, dicing die bond film and method for manufacturing semiconductor device

A chip bonding film and semiconductor technology, applied in the direction of film/sheet adhesive, semiconductor/solid device manufacturing, semiconductor devices, etc.

Active Publication Date: 2011-10-19
NITTO DENKO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the elongation at break of the adhesive sheet of Patent Document 5 is 40% or less, for example, when it is used for stealth dicing, it may break earlier than the semiconductor chip when tensile tension is applied, and there is a possibility that it may be different from the predetermined dividing line. online segmentation

Method used

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  • Thermosetting die bond film, dicing die bond film and method for manufacturing semiconductor device
  • Thermosetting die bond film, dicing die bond film and method for manufacturing semiconductor device
  • Thermosetting die bond film, dicing die bond film and method for manufacturing semiconductor device

Examples

Experimental program
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Effect test

Embodiment 1

[0167] The following (a) to (d) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23.6% by weight.

[0168] (a) Epoxy resin (manufactured by JER Corporation, Epicoat 1004, melting point 97°C)

[0169] 280 parts by weight

[0170] (b) Phenolic resin (Mirex XLC-4L, manufactured by Mitsui Chemicals, Inc., melting point 62° C.)

[0171] 306 parts by weight

[0172] (c) Acrylate-based polymer mainly composed of ethyl acrylate-methyl methacrylate (manufactured by Nagase Chemtex Co., Ltd., SG-708-6, glass transition temperature 6°C)

[0173] 100 parts by weight

[0174] (d) Spherical silica (manufactured by Admatex Co., Ltd., SO-25R)

[0175]237 parts by weight

[0176] After coating this adhesive composition solution on a release-treated film (release liner) composed of a polyethylene terephthalate film with a thickness of 50 μm after silicone release treatment, the solution was heated at 130° C. Let dry for 2 minutes. ...

Embodiment 2

[0178] In this embodiment 2, the addition amount of the epoxy resin of the above-mentioned (a) is changed to 270 parts by weight, and the addition amount of the phenolic resin of the above-mentioned (b) is changed to 296 parts by weight. In the same manner, the die-bonding film B of this example was produced.

Embodiment 3

[0180] In the present embodiment 3, the addition amount of the epoxy resin of the above-mentioned (a) is changed to 113 parts by weight, and the addition amount of the phenolic resin of the above-mentioned (b) is changed to 121 parts by weight. In the same manner, the die-bonding film C of this example was produced.

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Abstract

The present invention provides a thermosetting type die bond film that can be preferably broken by tensile force. It is a thermosetting type die bond film used for a method of obtaining a semiconductor element from a semiconductor wafer by forming a reforming region by irradiating the semiconductor wafer with a laser beam and then breaking the semiconductor wafer in the reforming region or a method of obtaining a semiconductor element from a semiconductor wafer by forming grooves that do not reach the backside of the semiconductor wafer on a surface thereof and then exposing the grooves from the backside by grinding the backside of the semiconductor wafer, wherein the elongation rate at break at 25 DEG C. before thermal curing is larger than 40% and 500% or less. The invention also provides a dicing die bond film and a method for manufacturing semiconductor device.

Description

technical field [0001] The present invention relates to a thermosetting die-bonding film used when adhesively fixing a semiconductor element such as a semiconductor chip to an adherend such as a substrate or a lead frame. Moreover, this invention relates to the dicing die-bonding film which laminated|stacked this thermosetting type die-bonding film and a dicing film. In addition, the present invention relates to a method of manufacturing a semiconductor device using the dicing / die-bonding film. Background technique [0002] Conventionally, in the manufacturing process of a semiconductor device, a silver paste has been used for affixing a semiconductor chip to a lead frame or an electrode member. The fixing process is performed by applying a paste adhesive to a die pad or the like of a lead frame, mounting a semiconductor chip thereon, and curing the paste adhesive layer. [0003] However, paste adhesives have large variations in coating amount, coating shape, and the like ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/68H01L21/78C09J7/02
CPCB28D5/0011H01L21/6836H01L24/27H01L24/29H01L24/48H01L24/83H01L2221/68336H01L2221/68359H01L2224/27436H01L2224/32225H01L2224/45124H01L2224/45144H01L2224/45147H01L2224/48091H01L2224/48227H01L2224/73265H01L2224/83191H01L2224/83855H01L2224/85207H01L2924/01011H01L2924/01012H01L2924/01013H01L2924/01014H01L2924/01015H01L2924/01016H01L2924/0102H01L2924/01029H01L2924/01033H01L2924/01047H01L2924/01051H01L2924/01052H01L2924/01057H01L2924/01058H01L2924/0106H01L2924/01079H01L2924/01082H01L2924/20103H01L2924/20104H01L2924/20105H01L2924/20106H01L2224/29H01L2224/2919H01L2924/01005H01L2924/01006H01L2924/01019H01L2924/01072H01L2924/0665H01L2224/92247H01L2924/01028H01L2224/32245H01L2224/48247H01L2224/2929H01L2224/29386H01L2924/00013H01L2924/10253H01L2924/15747H01L24/45H01L2924/3025H01L2924/15788H01L2924/181B23K26/364B23K26/40H01L24/73B23K2103/50Y10T428/28H01L2924/00014H01L2924/00H01L2924/3512H01L2924/00012H01L2924/0532H01L2924/05432H01L2924/05032H01L2924/0503H01L2224/29099H01L2224/29199H01L2224/29299H01L21/48
Inventor 菅生悠树田中俊平井上刚一
Owner NITTO DENKO CORP