Method for manufacturing isolation cavity compatible with semiconductor process and isolation cavity

Abstract

The invention provides an isolation cavity manufacturing method compatible with a semiconductor process. The method comprises the following steps of: providing a cavity substrate, and forming a conductive layer on the substrate; etching the conductive layer and the substrate in turn, and forming grooves on the substrate; depositing protection layers with conductivity on the surface of the conductive layer and the side walls and the bottoms of the grooves; removing the protection layers on the surface of the conductive layer and the bottoms of the grooves, and forming side wall protection layers with conductivity on the side walls of the grooves; continuously etching the grooves by using the conductive layer and the side wall protection layers as masks to form deep grooves; corroding the deep grooves by a wet corrosion method to form a cavity in the substrate; and filling a filling material among the side wall protection layers of the grooves by an electroplating method to isolate the cavity from outside. The invention also provides an isolation cavity. The method belongs to a front side process and is compatible with the semiconductor process; the implementation mode is simple, and wafer thickness after the cavity is formed is greatly reduced; and manufacturing cost can be reduced, the cavity has a good cost advantage, and the method is matched with the miniaturization trend of a device.

Description

technical field [0001] The invention relates to the technical field of micro-electro-mechanical system manufacturing, in particular, the invention relates to a method for manufacturing an isolation cavity compatible with a semiconductor process and the isolation cavity. Background technique [0002] In MEMS (Micro-Electro-Mechanical Systems) pressure sensors, microfluidic devices and other applications, tiny isolated cavities are important components, some of these cavities are vacuum, some are filled with specific gases or liquids. In different applications, these isolated cavities have different functions. For example, in a pressure sensor, the isolated cavities serve as the background pressure for pressure comparison. [0003] In order to realize the manufacture of cavities in the above-mentioned different applications, researchers have proposed various methods. For example, a common practice in the field of MEMS is to form grooves on one side of the silicon wafer through...

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Problems solved by technology

In addition, the entire thickness of the substrate where the cavity is realized by this method is very thick (the total thickness of the silicon wafer and glass), close to or exceeding 1 mm, and it is difficult to reduce the thickness, which does not conform to the miniaturization trend of semiconductor devices

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