Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A composite of silicon nanowire-organic functional compound and its preparation method

A technology for silicon nanowires and compounds, which is applied in the field of silicon nanowire-organic functional compound complexes, can solve the problems of interaction limitation, high activity of siloxane-based compounds and difficult to control, and difficult interface performance regulation, etc., and achieves the light absorption range. extended effect

Active Publication Date: 2011-11-30
TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
View PDF1 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] Due to the high activity of siloxane-based compounds and it is difficult to control, applying this strategy in the process of modifying the surface of silicon nanowires can easily form a multilayer structure, and the interface performance is not easy to control, so it is difficult to study the interaction between silicon nanowires and functional groups very restrictive

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A composite of silicon nanowire-organic functional compound and its preparation method
  • A composite of silicon nanowire-organic functional compound and its preparation method
  • A composite of silicon nanowire-organic functional compound and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Embodiment 1, prepare the complex of silicon nanowire-ethanol hydroxypyrene Schiff base

[0034] (1) Synthesis of ethanol hydroxypyrene Schiff base

[0035] The reaction raw materials are Pyrene-CHO (pyrene formaldehyde) and hydroxyethylamine H 2 N-(CH 2 ) 2 -OH, the reaction equation is as follows:

[0036]

[0037] Specific synthesis method: Weigh 230 mg of Pyrene-CHO and 183 mg of ethanolamine, mix them and place them in 50 ml of ethanol solution, heat and reflux for 12 hours, collect the precipitated pale yellow precipitate by filtration, wash with water, and dry to obtain ethanol hydroxy pyrene-CHO husband base.

[0038] (2) Preparation of composites of silicon nanowires-ethanol hydroxypyrene Schiff base

[0039]Weigh 20 mg of silicon nanowire raw material, immerse it in a 10% HF solution for 1 hour; place the soaked silicon nanowire in a vacuum drying oven at a drying temperature of 50°C and a pressure of 1000pa drying in medium for 10 hours to obtain sil...

Embodiment 2

[0042] Embodiment 2, preparation of the complex of silicon nanowire-ethanol hydroxypyrene Schiff base

[0043] Weigh 20 mg of silicon nanowire raw material, immerse it in a 10% HF solution for 1 hour; place the soaked silicon nanowire in a vacuum drying oven at a drying temperature of 50°C and a pressure of 1000pa Medium drying treatment was carried out for 6 hours to obtain silicon nanowires after drying treatment. Add 20mg of ethanol hydroxypyrene Schiff base (prepared according to the method of Example 1) and the dried silicon nanowires into 100ml of anhydrous toluene, stir, and react at 80°C for 24 hours; After cooling and filtering, the composite of silicon nanowire-ethanol hydroxypyrene Schiff base is obtained; the composite is cleaned with toluene-ethanol system (volume ratio 1:3), dried in nitrogen environment and stored.

Embodiment 3

[0044] Example 3, preparation of the composite of silicon nanowire-ethanol hydroxypyrene Schiff base

[0045] Weigh 20 mg of silicon nanowire raw material, immerse it in a 10% HF solution for 1 hour; place the soaked silicon nanowire in a vacuum drying oven at a drying temperature of 10°C and a pressure of 1000pa drying in medium for 10 hours to obtain silicon nanowires after drying. Add 15mg of ethanol hydroxypyrene Schiff base (prepared according to the method of Example 1) and the dried silicon nanowires into 100ml of anhydrous toluene, stir, and react at 50°C for 20 hours; After cooling and filtering, a composite of silicon nanowire-ethanol hydroxypyrene Schiff base is obtained; the composite is cleaned with a toluene-ethanol mixed system (volume ratio 1:3), dried in a nitrogen environment and stored.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses silicon nanowire-organic functional compound composite and a preparation method thereof. The preparation method of the silicon nanowire-organic functional compound composite comprises the following steps: 1) treating the surface of the silicon nanowires with solution of HF and obtaining treated nanowires; and 2) under water-free and anaerobic conditions, reacting the treated silicon nanowires with an organic functional compound having alcohol hydroxyl, which is represented by the formula (I), to obtain the silicon nanowire-organic functional compound composite, wherein in the formula (I), n is an integer which is more than or equal to 1, and R is a functional group with a fluorescence property. The method is simple and easy to implement; and because the distance between the silicon nanowire and the organic functional groups can be controlled effectively, the method is an effective method for constructing silicon nanowire single-layer organic functional groups. Result of analysis on the modified surface of the silicon nanowires by using infrared spectrum indicates the silicon nanowires and the organic functional groups are bonded in a Si-O-C mode. The formula (I) is HO-(CH2)n-N=CH-R.

Description

technical field [0001] The invention relates to a silicon nanowire-organic functional compound compound and a preparation method thereof. Background technique [0002] Silicon is the basic material of the modern information technology industry, and silicon nanowires are considered to be an important building block for future silicon-based nanodevices. [0003] For silicon nanomaterials, based on their particularity in device applications, it is necessary to study the effect of chemical modification on the performance of silicon nanomaterial-based devices. As the device size shrinks further, the influence from the surface state will become more critical. For nanodevices, this surface state often plays a decisive role in the performance of the device. The limitations of silicon materials such as poor chemical stability and easy aggregation further strengthen the necessity of chemical modification. In the application of sensing and electricity, the surface effect of semicond...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/06B82Y40/00B82Y30/00
Inventor 张晓宏赵文超王辉欧雪梅
Owner TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com