Composite integrated sensor structure and manufacturing method thereof

A technology for integrating sensors and manufacturing methods, applied in microstructure technology, microstructure devices, manufacturing microstructure devices, etc., can solve problems such as incompatibility and increased production costs

Active Publication Date: 2014-03-26
ADVANCED SEMICON MFG CO LTD
View PDF8 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These processes are the current mainstream, but they are not compatible with conventional semiconductor processes. Therefore, customized sensor processing production lines are required, which increases production costs.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Composite integrated sensor structure and manufacturing method thereof
  • Composite integrated sensor structure and manufacturing method thereof
  • Composite integrated sensor structure and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0046] The present invention will be further described below in conjunction with specific embodiment and accompanying drawing, set forth more details in the following description so as to fully understand the present invention, but the present invention can obviously be implemented in a variety of other ways different from this description, Those skilled in the art can make similar promotions and deductions based on actual application situations without violating the connotation of the present invention, so the content of this specific embodiment should not limit the protection scope of the present invention.

[0047] figure 1 It is a schematic plan view of the composite integrated sensor structure of an embodiment of the present invention. As shown in the figure, it can be seen that the composite integrated sensor structure includes an acceleration sensor (located in the upper half of the figure), a temperature resistance sensor (located in the middle of the figure) and a pre...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

Provided is a method for manufacturing a composite integrated sensor structure, including the steps of: providing a substrate and forming a doped region thereon; etching the substrate to form a groove for making a cavity; depositing a barrier layer on the substrate surface and the groove side-wall and the groove bottom; removing the barrier layer from the substrate surface and the groove bottom, and forming side-wall protection layers on the groove side-wall; the hard mask on the substrate and the side-wall protection layers interacting with each other to continue etching the groove to form a deep groove; corroding the deep groove to form a cavity inside the substrate; filling in an isolation and / or filling material between the side-wall protection layers of the groove to form a plug structure so as to isolate the cavity from the outside; flattening the substrate surface; making an electrically conductive lead and an electrode on the substrate surface; depositing a mass block in the region of an acceleration transducer and imaging same; and forming an isolation groove around the mass block, the mass block being connected to the substrate in a cantilevered manner. The present invention adopts a process which is positive and compatible with the conventional semiconductor process and has the advantages of being practical, economical, high-performance and the like.

Description

technical field [0001] The invention relates to the technical field of micro-electromechanical systems (MEMS) manufacturing, in particular, the invention relates to a composite integrated sensor structure integrating a temperature sensor, an acceleration sensor and a pressure sensor and a manufacturing method thereof. Background technique [0002] With the development of sensor technology, the sensor chip no longer contains a single sensor device, but appears more in the form of a system on chip (SOC or SIP). In a system-on-chip, multiple sensor device units are often integrated, and even peripheral CMOS integrated circuits are included to form a systematic on-chip composite integrated sensor structure. The appearance of the on-chip sensing system makes the integration of the sensor higher and higher, the function stronger and smaller, and the cost is significantly reduced at the same time. [0003] The structure and manufacturing method of composite integrated sensors are ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00G01D21/02
CPCB81C1/00182
Inventor 张挺谢志峰邵凯
Owner ADVANCED SEMICON MFG CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products