A kind of photovoltaic cell based on graphene pn junction and preparation method thereof
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- QINGDAO UNIV OF SCI & TECH
- Publication Date
- 2011-12-21
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
Technical field:
[0001] The invention relates to a photovoltaic cell constructed on the basis of a PN junction formed by P-type graphene and N-type graphene and a preparation method thereof, belonging to the technical field of graphene-based solar cells. Background technique:
[0002] In today's society, the problem of energy crisis and environmental degradation has become increasingly prominent, and solar energy, as a clean and renewable energy source, has attracted widespread attention. Photovoltaic cells are one of the main forms of solar energy utilization, and their use is of great significance to alleviate environmental pollution caused by petrochemical energy and the energy crisis caused by its increasing depletion. Currently, silicon solar cells are widely used. However, traditional silicon solar cells have problems such as complex preparation process, high energy consumption, waste, noise, pollution, etc., which limit their further development. Therefore, finding ...