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Modification treatment method for inner surface of plasma etching process chamber

A process chamber and plasma technology, which is applied in metal material coating process, coating, molten spraying, etc., can solve the problem of large damage to the etching process cavity wall, limited life of parts, and peeling off of the process cavity wall coating, etc. problems, to achieve the effects of prolonging life, improving yield, and stabilizing plasma etching resistance

Active Publication Date: 2011-12-28
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Entering the 300mm equipment, as the plasma power increases, the plasma damages the etching process cavity wall more and more, making the following problems prone to occur during the etching process: (1) particles; (2) process The coating on the chamber wall peels off, causing the plasma to directly interact with the aluminum substrate; (3) A1 2 o 3 Component life limited by higher power

Method used

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  • Modification treatment method for inner surface of plasma etching process chamber
  • Modification treatment method for inner surface of plasma etching process chamber
  • Modification treatment method for inner surface of plasma etching process chamber

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Embodiment 1

[0023] First, choose Y with a single cubic phase structure 2 o 3 The powder is used as a spraying material with a purity of 99.999% and a particle size range of 5-50 μm; then, sandblasting is performed on the inner wall of the etching process chamber of the aluminum substrate, and the sandblasting material is white corundum with a particle size range of 50-100 μm. Finally, the coating is prepared on the inner wall of the etching process chamber by plasma spraying. The plasma spraying parameters are: arc voltage 60V, arc current 550A, main gas (Ar gas) flow rate 60L / min, auxiliary gas (H 2 Gas) flow rate 30L / min, powder feeding speed 50g / min, spraying distance 100mm. During the spraying process, the substrate is cooled by air blowing, and the flow rate of the cooling gas is 400 L / min.

[0024] Depend on figure 1 It can be seen from the XRD pattern that Y 2 o 3 The powder presents a single cubic phase and does not contain other phases. Figure 2 shows the microscopic appeara...

Embodiment 2

[0026] First, choose Y with a single cubic phase structure 2 o 3 The powder is used as a spraying material with a purity of 99.95% and a particle size range of 5-50 μm; then, sandblasting is performed on the inner wall of the etching process chamber of the aluminum substrate, and the sandblasting material is brown corundum with a particle size range of 50-100 μm. Finally, the coating is prepared on the inner wall of the etching process chamber by plasma spraying. The plasma spraying parameters are: arc voltage 80V, arc current 350A, main gas (Ar gas) flow rate 40L / min, auxiliary gas (H 2 Gas) flow rate 25L / min, powder feeding speed 20g / min, spraying distance 80mm. During the spraying process, the base material is cooled by a circulating water cooling method, and the flow rate of the cooling gas is 200 L / min.

Embodiment 3

[0028] First, choose Y with a single cubic phase structure 2 o 3 The powder is used as a spraying material with a purity of 99.99% and a particle size range of 5-50 μm; then, sandblasting is performed on the inner wall of the etching process chamber of the aluminum substrate, and the sandblasting material is white corundum with a particle size range of 50-100 μm. Finally, the coating is prepared on the inner wall of the etching process chamber by plasma spraying. The plasma spraying parameters are: arc voltage 70V, arc current 600A, main gas (Ar gas) flow rate 90L / min, auxiliary gas (H 2 Gas) flow rate 50L / min, powder feeding speed 100g / min, spraying distance 135mm. During the spraying process, the substrate is cooled by air blowing, and the flow rate of the cooling gas is 100 L / min.

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Abstract

The invention discloses a modification treatment method for the inner surface of a plasma etching process chamber. The method comprises the following steps of: performing sand blasting treatment on a substrate; and spraying Y2O3 to the substrate which is subjected to the sand blasting treatment. In the method, Y2O3 powder is used as a spraying material to modify the inner surface of the chamber; a Y2O3 coating has more stable plasma etching resistance performance; the life of parts can be prolonged; and particles are reduced in an etching process. During modification treatment, an air blowingmethod or cooling water circulating method is adopted to cool the substrate, so that the cooling speed of the substrate is increased, the etching process chamber is prevented from deformation and melting during plasma spraying, and the yield of the etching process chamber is improved.

Description

technical field [0001] The invention relates to the field of plasma etching, in particular to a method for modifying the inner surface of a plasma etching process chamber. Background technique [0002] At present, the low-temperature plasma microfabrication method is the key technology for micro-nano processing of materials, because it is the basis of preparation technologies such as microelectronics, optoelectronics, micromechanics, and micro-optics. Especially in the manufacturing process of ultra-large-scale integrated circuits, there are nearly three One-third of the process is completed by means of plasma processing, such as plasma film deposition, plasma etching and plasma deglue. Among them, plasma etching has become one of the most critical processes, and it is an irreplaceable process to realize the high-fidelity transfer of micro-patterns in the production of VLSI from lithography templates to silicon wafers. [0003] In the plasma etching process, firstly, a laye...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C4/10C23C4/12C23C4/02C23C4/11C23C4/134
Inventor 刘邦武王文东夏洋李超波罗小晨李勇滔
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI