Preparation method of porous pyramid silicon surface light-trapping structure for solar cells

A technology of pyramid structure and light-trapping structure, which is applied in the field of solar cells, can solve the problems of high operating cost, complex equipment, and poor effect, and achieve good repeatability, short processing time, and good anti-reflection effect

Active Publication Date: 2011-12-28
NORTH CHINA ELECTRIC POWER UNIV (BAODING)
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AI Technical Summary

Problems solved by technology

The former includes traditional acid and alkali wet chemical etching techniques. These methods are simple in process, but the anti-refle

Method used

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  • Preparation method of porous pyramid silicon surface light-trapping structure for solar cells
  • Preparation method of porous pyramid silicon surface light-trapping structure for solar cells
  • Preparation method of porous pyramid silicon surface light-trapping structure for solar cells

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Embodiment 1

[0021] 1. Use a (100)-oriented monocrystalline silicon wafer with a resistivity of 7-13Ω·cm, ultrasonically clean it in acetone for 10 minutes, rinse it with deionized water for 2 minutes; then soak it in the CP-4A mixed solution at room temperature for 5 minutes , rinse with deionized water for 2 minutes, wherein the CP-4A solution is mixed according to the volume ratio of 3:5:3:22 by 40wt% hydrofluoric acid solution, nitric acid, absolute ethanol and deionized water, the mass of nitric acid The fraction is 65% to 68%; then soak in hydrofluoric acid with a concentration of 7.3mol / L at room temperature for 5 minutes, rinse with deionized water with a resistivity above 16MΩ·cm for 2 minutes, and dry in vacuum;

[0022] 2. Corrode in a water bath at 70°C for 30 to 40 minutes (for example, 35 minutes) with an alkaline etchant to etch out the pyramid suede on the surface, wherein the alkaline etchant is a mixed solution of potassium hydroxide, isopropanol and deionized water. In t...

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Abstract

The invention discloses a method for manufacturing a porous pyramid-type silicon surface light trapping structure for a solar cell and belongs to the technical field of solar cell. The method comprises the following steps of: after cleaning a silicon wafer, manufacturing a pyramid structure surface by using an alkali etching technology; and manufacturing the porous pyramid-type surface light trapping structure by combining a noble metal nanoparticle catalyzing and etching process. The average reflectivity of a porous pyramid-type silicon surface light trapping structure manufactured by the method within a spectral range of 300 to 1000nm is reduced to 3.3 percent, so that a new technical measure is provided for improving the efficiency of a silicon solar cell; and when the method is used, the conventional alkali etching process and the noble metal nanoparticle assistant etching process are comprehensively utilized, the characteristics of a wet etching method are kept, and a higher anti-reflective effect of the silicon surface is achieved.

Description

technical field [0001] The invention belongs to the technical field of solar cells, in particular to a method for preparing a light-trapping structure on the surface of a porous pyramid in the preparation of silicon solar cells. It specifically relates to a comprehensive technology that combines the catalytic etching process of noble metal nanoparticles with anti-reflection and light-trapping structures on the silicon surface and the traditional alkali etching method. Background technique [0002] For silicon solar cells, which occupy a dominant position in the solar cell market, reducing costs and improving conversion efficiency are the key development directions. Reducing the reflection of incident sunlight on the light-receiving surface of the cell is one of the means to improve the photoelectric conversion efficiency of the solar cell. Therefore, the preparation of the anti-reflection layer on the surface of the silicon solar cell is the main link in the solar cell manuf...

Claims

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Application Information

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IPC IPC(8): H01L31/18C30B33/10
CPCY02P70/50
Inventor 李美成任霄峰白帆余航
Owner NORTH CHINA ELECTRIC POWER UNIV (BAODING)
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