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Forming method for semiconductor pipe core and conductive pillar

A technology of semiconductor tubes and conductive pillars, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc. The effect of sexual potency

Active Publication Date: 2012-01-11
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the stress can cause fractures along the interface between the copper pillar and the solder used to join the electronic components
The above fragmentation will cause leakage current, which will cause serious reliability problems
Stresses can also cause cracking of the underfill along the interface between the underfill material and the copper pillars

Method used

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  • Forming method for semiconductor pipe core and conductive pillar
  • Forming method for semiconductor pipe core and conductive pillar
  • Forming method for semiconductor pipe core and conductive pillar

Examples

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Embodiment Construction

[0013] The embodiments in the following description will disclose how to form and use semiconductor structures. However, it must be understood that these embodiments provide a variety of feasible inventive concepts and can be applied to a variety of specific contents. The specific embodiments are only used to illustrate specific ways of forming and using the embodiments, and are not used to limit the scope of the present invention.

[0014] Figure 1 to Figure 8 These are structural cross-sectional views of different steps in the process of forming a semiconductor structure in one or more embodiments of the present invention. The "substrate" below refers to a semiconductor substrate on which a variety of layered structures and integrated circuit components are formed. The composition of the substrate may be silicon or a semiconductor compound such as gallium arsenide, indium phosphide, silicon germanium alloy, or silicon carbide. The layered structure can be a dielectric layer,...

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PUM

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Abstract

An embodiment in the invention discloses a forming method for a semiconductor pipe core and a conductive pillar. The semiconductor pipe core comprises a conductive pillar disposed at the semiconductor pipe core. A substrate is provided. A bond pad is over the substrate. A conductive pillar is over the bond pad. The conductive pillar has a top surface, edge sidewalls and a height. A cap layer is over the top surface of the conductive pillar. The cap layer extends along the edge sidewalls of the conductive pillar for a length. A solder material is over a top surface of the cap layer. The method provided in the invention can improve the structure and forming method of a copper pillar and can be applied in a semiconductor chip, making the semiconductor chip be provided with strong electric efficiency.

Description

Technical field [0001] The invention relates to a semiconductor packaging process, in particular to a structure of a conductive pillar in flip chip packaging and a method for forming the same. Background technique [0002] In the packaging of semiconductor components, flip chip technology plays an important role. Flip-chip microelectronics assembly involves direct electrical connections between a substrate (such as a circuit board) and flip-chip electronic components, and the internal wiring uses solder bumps. The advantages of flip-chip packaging are size reduction, increased performance, and flexibility of the packaged chip. Therefore, the growth rate of flip-chip packaging is much higher than other packaging methods. [0003] In the recently developed copper pillar technology, copper pillars are used instead of solder bumps to connect electronic components to the substrate. The distance between the copper pillars is small, and the possibility of short-circuit bridging is low, ...

Claims

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Application Information

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IPC IPC(8): H01L23/488H01L23/48H01L21/60
CPCH01L2924/01006H01L2924/00013H01L2224/13076H01L2224/13139H01L2224/11424H01L2224/13647H01L2924/01047H01L2924/01079H01L2224/16145H01L2924/01013H01L2924/10253H01L2225/06513H01L2224/13155H01L21/563H01L2224/03912H01L2224/16225H01L2224/13144H01L2224/97H01L2224/131H01L23/3192H01L2224/05073H01L2224/1132H01L2924/10335H01L2924/10329H01L24/11H01L2224/05166H01L2924/01082H01L2224/0401H01L2924/10272H01L2224/1145H01L2224/11462H01L2224/136H01L2924/10271H01L2224/73204H01L24/13H01L2924/01033H01L2224/05572H01L25/50H01L2924/01019H01L2924/3512H01L2224/13083H01L24/16H01L2924/014H01L2224/1147H01L2224/13111H01L2224/05647H01L2224/05573H01L2224/13147H01L2924/01029H01L2224/13582H01L24/05H01L25/0657H01L2924/00014H01L2924/14H01L2224/0361H01L2224/1308H01L2224/13566H01L2224/13655H01L2224/81H01L2224/13099H01L2924/00H01L2224/05552
Inventor 吕文雄郑明达林志伟何明哲刘重希
Owner TAIWAN SEMICON MFG CO LTD
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