Semiconductor device and forming method thereof

Abstract

A semiconductor device includes a semiconductor body located on an insulating layer, and a second gate located on the insulating layer,wherein at least part of the second gate is embedded in the semiconductor body. A method for fabricating the semiconductor device includes forming the semiconductor body on the insulating layer, forming a cavity which exposes the insulating layer in the semiconductor body, and forming the second gate, wherein the cavity is filled with at least part of the second gate. The present invention is beneficial to decrease the short-channel effect, the resistance of the source / drain regions and the parasitic capacitance.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a semiconductor device and a forming method thereof. Background technique [0002] As the channel length of MOSFET (Metal Oxide Field Effect Transistor) continues to shorten, a series of effects that can be ignored in the MOSFET long channel model become more and more significant, and even become the dominant factor affecting performance. This phenomenon is collectively referred to as short channeling effect. The short channel effect is easy to deteriorate the electrical performance of the device, such as causing a decrease in the gate threshold voltage, an increase in power consumption, and a decrease in the signal-to-noise ratio. [0003] In order to control the short channel effect, people have to dope more impurity elements such as phosphorus and boron into the channel, but this will easily lead to the decrease of carrier mobility in the channel of the device;...

AI Technical Summary

Problems solved by technology

Thus, as the width (d) of the source-drain region 30 increases, the parasitic capacitance between the source-drain region 30 and the gate 40 and the semiconductor base 20 increases, thus increasing the resistance capacitance Delay or degrade device AC performance

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