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Diffusion process in solar panel preparation

A technology of solar cells and diffusion technology, applied in the field of diffusion technology, can solve the problems of unsatisfactory removal of impurities and micro-defects, inability to prepare PN junctions, multiple leakage currents of solar cells, etc. Large-scale production, low equipment requirements, and low cost effects

Inactive Publication Date: 2012-01-11
BYD CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] In order to solve the problem that the diffusion process of the prior art cannot prepare a perfect PN junction, the prepared solar cells still have a lot of leakage current, the photoelectric conversion efficiency is not ideal, and the effect of removing impurities and micro defects is not ideal at the same time. The service life of the battery sheet is not high, providing a simple and easy-to-process diffusion process that has good effects of removing impurities and micro-defects, and can prepare a perfect PN junction to improve the service life and photoelectric conversion efficiency of the prepared solar cells

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] Diffusion process

[0044] Put the textured silicon wafer into a diffusion furnace (TS-81254LH).

[0045] (1) Adjust the temperature at the furnace mouth to 690°C, the temperature in the furnace to 700°C, and the temperature at the end of the furnace to 700°C, pass nitrogen gas at a rate of 8 L / min, and conduct low-temperature heat treatment for 25 minutes.

[0046] (2) Adjust the temperature at the furnace mouth to 930°C, the temperature in the furnace to 950°C, and the temperature at the end of the furnace to 940°C, nitrogen, DCE, oxygen, and nitrogen gas at a rate of 8 L / min, and DCE at a rate of 0.1 L / min. min, the oxygen flow rate is 4L / min, and the oxidation treatment is 10 minutes.

[0047] (3) Adjust the furnace mouth temperature to be 840°C, the temperature in the furnace to be 850°C, and the temperature at the end of the furnace to be 845°C, nitrogen, phosphorus oxychloride, oxygen, nitrogen feed rate 8L / min, phosphorus oxychloride feed rate The input volume...

Embodiment 2

[0053] Diffusion process

[0054] Put the textured silicon wafer into a diffusion furnace (TS-81254LH).

[0055] (1) Adjust the temperature at the furnace mouth to 740°C, the temperature in the furnace to 750°C, and the temperature at the end of the furnace to 750°C, pass nitrogen gas at a rate of 8 L / min, and conduct low-temperature heat treatment for 20 minutes.

[0056] (2) Adjust the temperature at the furnace mouth to 890°C, the temperature in the furnace to 900°C, and the temperature at the end of the furnace to 895°C, nitrogen, DCE, oxygen, the amount of nitrogen gas is 8L / min, and the amount of DCE is 0.08L / min. min, the oxygen flow rate is 4L / min, and the oxidation treatment takes 15 minutes.

[0057] (3) Adjust the furnace mouth temperature to be 840°C, the temperature in the furnace to be 850°C, and the temperature at the end of the furnace to be 845°C, nitrogen, phosphorus oxychloride, oxygen, nitrogen feed rate 8L / min, phosphorus oxychloride feed rate The input ...

Embodiment 3

[0063] The diffusion process was carried out in the same manner as in Example 1, except that the amount of DCE introduced in step (2) was 0.05 L / min.

[0064] Using the same method as in Example 1, the thickness of the oxide layer on the surface of the silicon wafer prepared in step (2) was measured to be 26 nm.

[0065] Using the same method as in Example 1, the ohmic resistance of the silicon wafer prepared in step (3) was measured to be 52 ohms, and the PN junction depth was 0.38 microns.

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Abstract

The invention provides a diffusion process in solar panel preparation, which comprises the steps of: a, carrying out heat treatment on a silicon chip in the nitrogen atmosphere at a low temperature; b, carrying out oxidation treatment on the treated silicon chip obtained in the step a in the atmosphere of C2H2C12, nitrogen and oxygen at 860 to 1200 DEG C; carrying out phosphorous diffusion treatment on the treated silicon chip obtained in the step b through inducing a phosphorous source in the atmosphere of nitrogen and oxygen; d, carrying out driving-in treatment on the treated silicon chip obtained in the step c in the mixed atmosphere of nitrogen and oxygen at 800 to 9000 DEG C; and e, carrying out annealing treatment on the treated silicon chip obtained in the step d in the nitrogen atmosphere. PN junctions with the perfect quality can be prepared, the photoelectric conversion rate of solar panels is higher, in addition, the reliability and the stability of the solar panels are improved, the compounding center of the silicon chip surface can also be reduced at higher quality, and the service life of few current carriers are prolonged. The diffusion process further improves the impurity removal effect of the diffusion process, and in addition, the process is simple and is easy to implement.

Description

technical field [0001] The invention relates to a diffusion process in the preparation of solar cells. Background technique [0002] With the depletion of traditional energy sources and the aggravation of environmental pollution, the development and application of new energy sources has become a hot spot in human research. Inexhaustible, green and pollution-free solar energy is one of the key points in the development and utilization of new energy. [0003] Silicon wafers are the core components of solar cells. Silicon wafers are generally made into silicon wafers after multi-step purification of raw silicon. Oxide layer → silicon nitride film production → screen printing back, positive electrode → sintering → testing and sorting to prepare solar cells. [0004] Solar cells have high requirements on the purity of silicon, generally above 6N, and complex purification of silicon raw materials is required, but the purity of the purified silicon is still not high, and there ar...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 滕美玲胡宇宁
Owner BYD CO LTD
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