Method for rapidly sintering solar wafer
A solar silicon wafer, rapid sintering technology, applied in the field of sintering, can solve the problems of excessive positive electrode contact resistance, poor hydrogen passivation effect, and reduced minority carrier lifetime, so as to improve minority carrier lifetime, reduce thermal stress, and reduce warpage Effect
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Embodiment 1
[0038] Embodiment 1: a kind of method for fast sintering of solar silicon chip, carry out according to the following steps:
[0039] (1), transmission:
[0040] The printed upper and lower electrodes and back field silicon wafers are transported to the mesh belt of the sintering furnace through the conveyor belt of the screen printing machine, and the cells are transported to the sintering furnace;
[0041] (2), drying and decoking:
[0042] After step (1), pass through three drying zones and three transition zones, with a total length of 4860mm and a speed of 70-80mm / s, to dry the slurry and discharge the organic matter in the slurry; the temperature in the first drying zone is 150°C, The length is 1200mm; the temperature of the second drying zone is 180°C and the length is 1200mm; the temperature of the third drying zone is 170°C and the length is 1200mm; the temperature of the first transition zone is 350°C and the length is 300mm; the temperature of the second ...
Embodiment 2
[0047] Embodiment 2: a kind of method for fast sintering of solar silicon chip, carry out according to the following steps:
[0048] (1), transmission:
[0049] The printed upper and lower electrodes and back field silicon wafers are transported to the mesh belt of the sintering furnace through the conveyor belt of the screen printing machine, and the cells are transported to the sintering furnace;
[0050] (2), drying and decoking:
[0051] After step (1), pass through three drying zones and three transition zones, with a total length of 4860mm and a speed of 70-80mm / s, to dry the slurry and discharge the organic matter in the slurry; the temperature in the first drying zone is 170°C, The length is 1200mm; the temperature of the second drying zone is 200°C and the length is 1200mm; the temperature of the third drying zone is 180°C and the length is 1200mm; the temperature of the first transition zone is 400°C and the length is 300mm; the temperature of the secon...
Embodiment 3
[0057] A method for rapid sintering of solar silicon wafers is carried out in the following steps:
[0058] (1), transmission:
[0059] The printed upper and lower electrodes and back field silicon wafers are transported to the mesh belt of the sintering furnace through the conveyor belt of the screen printing machine, and the cells are transported to the sintering furnace;
[0060] (2), drying and decoking:
[0061] After step (1), pass through three drying zones and three transition zones, with a total length of 4860mm and a speed of 70-80mm / s, to dry the slurry and discharge the organic matter in the slurry; the temperature in the first drying zone is 180°C, The length is 1200mm; the temperature of the second drying zone is 220°C and the length is 1200mm; the temperature of the third drying zone is 200°C and the length is 1200mm; the temperature of the first transition zone is 450°C and the length is 300mm; the temperature of the second transition zone The temp...
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