Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Solid state relay

A solid state relay and relay technology, applied in electrical components, electronic switches, pulse technology, etc., can solve problems such as poor anti-interference ability, insufficient control, increased chip area and wiring difficulty, etc., to achieve strong anti-interference ability, increase area, The effect of speeding up the bleeder circuit is simple

Inactive Publication Date: 2012-01-25
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF5 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This solution effectively reduces the turn-on time, but due to the introduction of capacitors and the need for output power, the chip area and the difficulty of wiring are inevitably increased. In addition, the control of the slope of the falling edge is also slightly insufficient, and the anti-interference ability is poor.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Solid state relay
  • Solid state relay
  • Solid state relay

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] An embodiment of the solid state relay according to the present invention is as figure 1 Shown in Example 1. Including, a light-emitting element 112 connected between the relay input terminals 111 and 111a; a photovoltaic diode array 113 that generates photovoltaic output when coupling the light signal of the light-emitting element; a normally open metal oxide field connected between the relay output terminals The effect transistor 120 also includes,

[0030] A charging circuit composed of a phototransistor 114 and a resistor 119, wherein the emitter of the phototransistor 114 is connected to the gate of the output normally-on metal oxide field effect transistor 120, the collector is connected to the first end of the photovoltaic diode array 113, and the resistor 119 is connected between the source of the output normally-on metal oxide field effect transistor 120 and the second end of the photovoltaic diode array 113; here, the base of the phototransistor 114 is suspen...

Embodiment 2

[0044] refer to figure 2 shows another circuit configuration, this circuit is in figure 1 On the basis of the shown circuit, a photoresistor 222 is supplemented on the branch where the resistor 219 is located. According to the previous analysis, figure 1 The function of the resistor 119 in the shown circuit is to ensure that the N-channel depletion-type MOSFET 118 is in a cut-off state when the gate of the output MOSFET 120 is charged (this determines the minimum value of the resistor 119) , while in the initial stage of discharging the gate charge of the output mosfet 120 (ie t d stage) the presence of the resistor 119 improves the gate-source bias of the N-channel depletion-mode MOSFET 118, thereby increasing the drain-source current. figure 2 The photoresistor 222 added in the middle circuit is in a low-resistance state when receiving light, and is in a high-resistance state when there is no light, so that when charging the gate of the output metal oxide field effect t...

Embodiment 3

[0046] image 3 It is a circuit application scheme when there are two output metal oxide field effect transistors. The sources of the two normally-on metal oxide field effect transistors 320 and 320a are connected to serve as the third output terminal of the relay; the two drains serve as the first and second output terminals of the relay respectively. This circuit structure can be used in an AC environment, and only one of the metal oxide field effect transistors works in each half current cycle. The working principles of the charging circuit and the accelerated discharge circuit are the same as those of the first embodiment above, and will not be described again.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a solid state relay, which comprises a photovoltaic diode array, one or two field effect transistors, a charging circuit and an acceleration discharge circuit, wherein the charging circuit consists of a photoelectric transistor and a resistor; an emitter of the photoelectric transistor is connected with a gate of the field effect transistor, a collector is connected to a first end of the photovoltaic diode array, and the resistor is connected between a source of the field effect transistor and a second end of the photovoltaic diode array; the acceleration discharge circuit consists of a triode, an N-channel field effect transistor and two resistors; the triode is connected with the gate of the field effect transistor through one resistor, the collector is connected to the second end of the photovoltaic diode array, and a base is connected to the first end of the photovoltaic diode array; and a drain of the N-channel field effect transistor is connected with the gate of the field effect transistor through one resistor, the source and a substrate are connected to the source of the field effect transistor, and the gate is connected to the second end of the photovoltaic diode array. The solid state relay is simple in structure; and when turning-on time is not increased, anti-interference capacity is improved.

Description

technical field [0001] The invention belongs to the technical field of electrical appliances and electronics, and in particular relates to the design of a solid state relay. Background technique [0002] Solid state relay (Solid State Relays, SSR) is a non-contact electronic switch, which uses the switching characteristics of electronic components (such as switching transistors, bidirectional thyristors and other semiconductor devices) to achieve non-contact and non-sparking connection and The purpose of disconnecting the circuit is to add a DC or pulse signal to its input, and the output can change from the off state to the on state (blocked state when there is no signal), that is, when the voltage is applied between the control pins, The solid state relay is turned on, and when the applied voltage between the control pins is withdrawn, the solid state relay is turned off, thereby controlling a large load. [0003] The solid-state relay turn-off control circuit introduced ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H03K17/56
Inventor 张有润吴浩然张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com