Unlock instant, AI-driven research and patent intelligence for your innovation.

Ii-iii-n semiconductor nanoparticles and method of making same

A II-III-N, nanoparticle technology, applied in the field of nitride semiconductor nanoparticles, can solve the problems of nanoparticle reporting and achieve excellent luminescent properties

Inactive Publication Date: 2015-05-27
SHARP KK
View PDF10 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] III-IV-V semiconductors have been reported in thin films, such as SiGaAs (eg in US4213781), but not in nanoparticles

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ii-iii-n semiconductor nanoparticles and method of making same
  • Ii-iii-n semiconductor nanoparticles and method of making same
  • Ii-iii-n semiconductor nanoparticles and method of making same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0123] Embodiment 1: colloidal ZnGaN semiconductor nanocrystal

[0124] Gallium iodide (270mg, 0.6mmol), sodium amide (500mg, 12.8mmol), hexadecanethiol (308μl, 1.0mmol), zinc stearate (379mg, 0.6mmol) and 1-octadecene (20ml ) is rapidly heated to 250°C and maintained at this temperature. Of the reaction components, gallium iodide provides the Group III metal (gallium), sodium amide provides the nitrogen atom, cetyl mercaptan is the capping agent with electron-donating groups, and zinc stearate provides the Group II metal ( zinc) and 1-octadecene served as solvent. Over the course of 60 minutes, 0.25 ml portions of the reaction mixture were taken and diluted with toluene (3 ml) and a centrifuge was used to remove any insoluble material. The resulting clear solution was analyzed by emission spectroscopy and showed a change in peak emission wavelength from 450 to 600 nm during the course of the reaction, as figure 1 shown in . The peak in the emission spectrum has a full wid...

Embodiment 2

[0136] Embodiment 2: colloidal ZnInN semiconductor nanocrystal

[0137] Indium iodide (300mg, 0.6mmol), sodium amide (500mg, 12.8mmol), hexadecanethiol (308μl, 1.0mmol), zinc stearate (379mg, 0.6mmol) and diphenyl ether (20ml) were quickly Heat to 250°C and maintain at this temperature. Among the reaction components, indium iodide provides the Group III metal (indium), sodium amide provides the nitrogen, cetyl mercaptan is the capping agent with electron-donating groups, and zinc stearate provides the Group II metal (Zn ) and diphenyl ether acts as a solvent. Over the course of 60 minutes, 0.25 ml portions of the reaction mixture were taken and diluted with cyclohexane (3 ml) and a centrifuge was used to remove any insoluble material. The resulting clear solution was analyzed by PL emission spectroscopy and showed a change in maximum emission wavelength from 500 to 850 nm during the course of the reaction, as Figure 4 shown in . ( Figure 4 The emission spectrum on the f...

Embodiment 3

[0145] Embodiment 3: colloidal ZnAlN semiconductor nanocrystal

[0146]Aluminum iodide (102mg, 0.25mmol), sodium amide (468mg, 12mmol), hexadecanethiol (259μl, 1.0mmol), zinc stearate (474mg, 0.75mmol) and 1-octadecene (25ml) Heat rapidly to 250°C and hold at this temperature. Among the reaction components, aluminum iodide provides the Group III metal (aluminum), sodium amide provides the nitrogen atom, cetyl mercaptan is the capping agent with electron-donating groups, and zinc stearate provides the Group II metal ( zinc) and 1-octadecene served as solvent. Over the course of 60 minutes, 0.25 ml portions of the reaction mixture were taken and diluted with toluene (3 ml) and a centrifuge was used to remove any insoluble material. The resulting clear solution was analyzed by absorption and emission spectroscopy and showed a change in maximum emission wavelength from 420 to 950 nm during the course of the reaction, as Figure 6 shown in . The peak in the emission spectrum ha...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
porosityaaaaaaaaaa
sizeaaaaaaaaaa
Login to View More

Abstract

The present application provides nitride semiconductor nanoparticles, for example nanocrystals, made from a new composition of matter in the form of a novel compound semiconductor family of the type group II-III-N, for example ZnGaN, ZnInN, ZnInGaN, ZnAlN, ZnAlGaN, ZnAlInN and ZnAlGaInN. This type of compound semiconductor nanocrystal is not previously known in the prior art. The invention also discloses II-N semiconductor nanocrystals, for example ZnN nanocrystals, which are a subgroup of the group II-III-N semiconductor nanocrystals. The composition and size of the new and novel II-III-N compound semiconductor nanocrystals can be controlled in order to tailor their band-gap and light emission properties. Efficient light emission in the ultraviolet-visible-infrared wavelength range is demonstrated. The products of this invention are useful as constituents of optoelectronic devices such as solar cells, light emitting diodes, laser diodes and as a light emitting phosphor material for LEDs and emissive EL displays.

Description

technical field [0001] The present invention relates to nitride semiconductor nanoparticles, such as nanocrystals with nanometer dimensions, and in particular to such materials in new compound semiconductor systems of type II-III-N. Such materials can be used in a wide range of applications including solar cells, light emitting diodes, emissive EL displays and bioimaging. Background technique [0002] Semiconductor nanocrystals whose size is comparable to the diameter of bulk excitons exhibit quantum confinement effects. This is most clearly seen in the optical spectrum, which shifts towards blue wavelengths as the size of the crystals decreases. [0003] Compound semiconductors are semiconductor materials composed of elements from two or more groups of the periodic table. These elements can form binary (2 elements), ternary (3 elements), quaternary (4 elements) or pentadic (5 elements) compounds. The most common compound semiconductor families are III-V (eg GaAs, AlGaAs,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C01G15/00C01G9/00C01G9/08C01B21/06B82Y40/00B82Y30/00C30B29/38
CPCC09K11/623Y02E10/549H01L31/032Y10S977/773C01B21/0615C01B21/0632C01B21/072H01L31/18H01L33/26H01L33/32H01L33/06
Inventor 彼德·内尔·泰勒乔纳森·汉夫纳恩斯图尔特·爱德华·胡帕蒂姆·迈克尔·斯密顿
Owner SHARP KK