Method for improving photoresist exposure precision
A technology of exposure precision and photoresist, which is applied in the direction of microlithography exposure equipment, photolithography exposure device, etc., to achieve the effects of low cost, improved exposure precision, and improved lithography precision
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Embodiment 1
[0043] (1) vertically reflect the ultraviolet light passing through the photoresist, and the specific steps are as follows:
[0044] Step 1: Select a transparent substrate 6, such as a glass sheet.
[0045] Step 2: Spin-coat the high-transmittance photoresist 5 on the front surface of the transparent substrate 6, and pre-bake the photoresist 5.
[0046] Step 3: Drop deionized water on the front of the highly reflective substrate 10, such as a polished silicon wafer, and glue the back of the transparent substrate 6 and the front of the polished highly reflective substrate 10 together.
[0047] Step 4: Put the bonded transparent substrate 6 and the polished highly reflective substrate 10 into a photolithography machine for photolithography. The ultraviolet light (3) that passes through the photoresist 5 and the transparent substrate 6 is vertically totally reflected by the polished highly reflective substrate 10, preventing the ultraviolet light from reaching the wafer tray 7 o...
Embodiment 2
[0051] (II) vertically reflect the ultraviolet light passing through the photoresist, the specific steps are as follows:
[0052] Step 1: Choose polished pyrex 7740 glass piece 6 as the substrate.
[0053] Step 2: Spin-coat SU-8-5 photoresist 5 with a thickness of 2-50 μm on the front surface of the pyrex 7740 glass sheet 6, and perform pre-baking at 50-70° C.
[0054] Step 3: Select the polished silicon wafer 10 to achieve vertical total reflection of the transmitted light.
[0055] Step 4: Drop deionized water on the front side of the polished silicon wafer 10, and stick it together with the back side of the pyrex 7740 glass wafer 6.
[0056] Step 5: Put the bonded wafers on the wafer tray 7 of the photolithography machine, and perform photolithography at a wavelength of 365nm for 30-300s. The ultraviolet light 5 passing through the SU-8-5 photoresist 5 and the pyrex 7740 glass sheet 6 will be vertically totally reflected by the polished silicon wafer 10, and will not ente...
Embodiment 3
[0060] (Ⅲ) Total absorption of ultraviolet light passing through the photoresist, the specific steps are as follows:
[0061] Step 1: Select a transparent substrate 6, such as a glass sheet.
[0062] Step 2: Spin-coat the high-transmittance photoresist 5 on the front surface of the transparent substrate 6, and pre-bake the photoresist 5.
[0063] Step 3: Drop deionized water on the front of the polished transparent substrate 11, and bond the back of the transparent substrate 6 and the front of the polished transparent substrate 11 together.
[0064] Step 4: Select photoresist 12 for absorbing ultraviolet light 3 .
[0065] Step 5: Spin-coat the high-absorption photoresist 12 on the front surface of the glass sheet 13 .
[0066] Step 6: bonding the back side of the polished transparent substrate 11 and the front side of the glass sheet 13 through the coated high absorption photoresist 12 . And put into photolithography machine and carry out photoetching, the ultraviolet ligh...
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Abstract
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