Preparation method of p-Si-based hetero-structure with large magneto-resistance effect

A heterogeneous structure and magnetoresistance technology, applied in the manufacture/processing of electromagnetic devices, ion implantation plating, coating, etc., can solve the problems of low spin injection efficiency and mismatching of magnetic film resistivity, etc., and achieve easy Implementation, good protection, and performance-enhancing effects

Inactive Publication Date: 2013-05-22
TIANJIN UNIVERSITY OF TECHNOLOGY
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the spin injection efficiency in the heterostructure formed by the current magnetic thin film material and Si base is not high, mainly due to the mismatch between the resistivity of the magnetic thin film and Si

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of p-Si-based hetero-structure with large magneto-resistance effect
  • Preparation method of p-Si-based hetero-structure with large magneto-resistance effect
  • Preparation method of p-Si-based hetero-structure with large magneto-resistance effect

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0022] According to the structure and property analysis of the samples prepared in the present invention, the best implementation mode of preparing Ni-CN / p-Si heterostructure with large magnetoresistance effect will be described in detail below.

[0023] The magnetron sputtering equipment in this embodiment adopts the DPS-II opposite-target magnetron sputtering coating machine produced by the Shenyang Scientific Instrument Development Center of the Chinese Academy of Sciences.

[0024] A method for preparing a p-Si-based heterostructure with a large magnetoresistance effect This patent operates, and the steps are as follows:

[0025] 1) Install a pair of graphite targets with a purity of 99.99% on the target head of the facing target magnetron sputtering coating machine. The thickness of the target is 6 mm and the diameter is 100 mm; uniformly fixed on the graphite target with a purity of 99.99% The Ni sheet, the area of ​​the Ni sheet is 0.5 cm 2 , place 9 slices;

[0026] ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
diameteraaaaaaaaaa
purityaaaaaaaaaa
Login to view more

Abstract

The invention relates to a preparation method of a p-Si-based hetero-structure with a large magneto-resistance effect, which is operated by the following steps of: 1) mounting a pair of graphite targets and uniformly fixing Ni sheets on a target head opposite to a target of a magnetron sputtering coating machine; 2) removing impurities from the surface of a glass substrate of a p-type Si sheet with a natural oxidation layer and mounting the glass substrate on a sample rack; 3) starting the magnetron sputtering coating machine to vacuumize; 4) introducing a mixed gas of N2 and Ar into a vacuumchamber; 5) switching on a sputtering direct-current power source to apply current and voltage to the pair of the graphite targets; 6) opening a baffle and starting to sputter so that an Ni-CN (Cellulose Nitrate) composite thin film is produced on the substrate; and 7) after sputtering, inflating the vacuum chamber with nitrogen and taking a prepared target product out. The p-Si-based hetero-structure provided by the invention has the advantages that: a CN material is used as a master material of the p-Si-based hetero-structure, so that the p-Si-based hetero-structure is acid-resisting, oxidation-resisting and corrosion-resisting, and a spin electronics device can be protected well. The preparation method of the p-Si-based hetero-structure has the advantages of simple process, easiness of implementation, low cost and wide application range.

Description

technical field [0001] The invention relates to a semiconductor material preparation technology, in particular to a preparation method of a p-Si-based heterostructure with a large magnetoresistance effect. Background technique [0002] In recent years, spintronic materials have attracted much attention due to their great application prospects in magnetic information storage and reading. The 2007 Nobel Prize in Physics was awarded to Albert Fert and Peter Grünberg, the pioneers of spintronics. Now, how to obtain high spin-polarized current is still one of the hot issues in the field of spintronics. The methods of obtaining high spin injection mainly include selecting electrode materials with high spin polarizability and preparing dilute magnetic semiconductor materials. [0003] In order to apply spintronic devices to practical products, they need to be combined with existing Si semiconductor technology. However, the spin injection efficiency in the heterostructure formed ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/12C23C14/35C23C14/06
Inventor 王晓姹
Owner TIANJIN UNIVERSITY OF TECHNOLOGY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap