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Suspension photoresist planarization technology for MEMS structure

A planarization process and photoresist technology, which is applied in the field of planarization technology and photolithography, can solve problems such as few researches, and achieve the effects of simplified process flow, material saving and simple method

Active Publication Date: 2012-03-14
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These methods are mainly concentrated in the fields of pattern etching and structural framework, but there is little research on the application in the key areas of microelectronic material planarization

Method used

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  • Suspension photoresist planarization technology for MEMS structure
  • Suspension photoresist planarization technology for MEMS structure
  • Suspension photoresist planarization technology for MEMS structure

Examples

Experimental program
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Effect test

Embodiment 1

[0020] This embodiment is a method for fabricating an Al micro-beam structure by using a suspension photoresist planarization process.

[0021] Cantilever beams and double-end fixed beam structures are often required to be fabricated in MEMS devices. The traditional manufacturing method is usually to make the shape of the microbeam on the flat lower surface first, then etch the release groove on the lower material around the edge of the microbeam, and finally use the isotropic etching method to corrode and hollow out the lower material to release the microbeam structure. This manufacturing process limits the sequence of micro-beams first and then release, and a series of complex and expensive processes such as surface planarization are required to fabricate micro-beam structures in the case of pre-existing grooves. The application of the suspension photoresist realizes the process steps of the groove first and then the microbeam structure, which makes the manufacturing proces...

Embodiment 2

[0029] This embodiment is a method for manufacturing the suspended electrode at the end of the cantilever beam by using the suspension photoresist planarization process.

[0030] In the MEMS structure, it is often necessary to make a new suspended structure on the suspended structure, such as the current detection structure of the metal layer at the end of the cantilever beam. The floating electrodes must be fabricated after etching the cantilever beam to release the groove, and due to the existence of the groove steps at the end of the cantilever beam, the fabrication of the metal floating electrodes must use a planarization process. see Figures 4a-4f , its specific process steps are as follows:

[0031] (1) Cantilever beams are etched on silicon wafers and passed through XeF 2 Processes such as release make it a suspended structure, and other components can be made according to requirements.

[0032] (2) Self-assemble AZ5214 photoresist on the surface of deionized water ...

Embodiment 3

[0037] This embodiment is a method for manufacturing fixed-point connection electrodes across trenches by using the suspension photoresist planarization process.

[0038] see Figures 5a-5d , in the MEMS process, it is sometimes necessary to connect metal electrodes across the intermediate structure and across the trench between two separated structures. The suspension photoresist planarization process of this method provides convenience for the fabrication of this structure. Its specific implementation steps are as follows:

[0039] (1) Make the AZ5214 photoresist self-assemble on the surface of deionized water to form a photoresist film with a thickness of about 500nm, and then transfer it to the pre-fabricated Figure 5a On the top layer silicon-silicon oxide-silicon substrate triple layer structure (SOI substrate) of the shown structure, so that it forms a suspension photoresist structure spanning the gap structure in the top layer silicon.

[0040] (2) Exposing and deve...

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Abstract

The invention provides a suspension photoresist planarization technology for an MEMS structure. First, a photoresist film made by a self-assembly method is adhered and transferred on a semi conducting material surface with grooves or gaps to form a flattening suspension photoresist structure; exposure development is carried out to selectively remove photoresist film on positions unneeded, and hardening is carried out; metal or other semi conducting material layer is precipitated on the photoresist surface under room temperature to realize structure planarization technology; at last, the precipitated material layer is etched to form structures and figures. The method is different from a traditional planarization technology; the self-assembly method is utilized to combine the planarization technology and a photoetching process; and the method is simple, material saving, at low cost and with low equipment requirement.

Description

technical field [0001] The invention relates to a flattening technology and a photolithography technology in a microelectronic manufacturing process, in particular to a flattening technology for a suspension photoresist used in a MEMS structure. Background technique [0002] In microelectromechanical system (MEMS) devices, especially in acceleration sensors, pressure sensors, photoelectric devices, radio frequency devices, etc., it is often necessary to make suspended structures and movable elements on larger steps and grooves, such as microcantilever The ends of the beam span the electrodes of the release trench. A common method is to deposit a layer of sacrificial layer material first, fabricate structures or devices on the sacrificial layer, and then etch the sacrificial material to release the structure. However, MEMS structures often contain trenches with a high aspect ratio, and higher steps will cause fluctuations in the sacrificial layer and the film on it, which of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/00G03F7/16B81C1/00
Inventor 吴紫阳杨恒李昕欣王跃林
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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