Enhanced high electron mobility transistor and manufacturing method thereof

A manufacturing method and transistor technology, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve problems such as poor performance of enhanced gallium nitride transistors, and achieve the effect of improving poor performance and increasing threshold voltage

Active Publication Date: 2012-03-14
INFINITY COMM TECH INC
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  • Abstract
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Problems solved by technology

[0004] An object of the present invention is to provide an enhanced high electron mobility transistor and its manufacturing method, in order to improve the efficiency of

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  • Enhanced high electron mobility transistor and manufacturing method thereof
  • Enhanced high electron mobility transistor and manufacturing method thereof
  • Enhanced high electron mobility transistor and manufacturing method thereof

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[0044] In order to enable your reviewer to have a further understanding and understanding of the features, purposes and functions of the present invention, the detailed descriptions are as follows:

[0045] Please refer to figure 1 , Is a schematic structural cross-sectional view of an embodiment of an enhanced high electron mobility transistor with multiple PN junctions according to the present invention. As shown in the figure, the enhanced high electron mobility transistor 10 of this embodiment includes a substrate 11, a buffer layer 12, a source 13 and a drain 14, and a multilayer stack of multiple PN junctions 15. , And a grid 16. The substrate 11 is used to support the semiconductor components constructed on it, and its material is not particularly limited, and can be gallium arsenide (GaAs), gallium nitride (GaN), silicon (Si), silicon carbide (SiC), sapphire (Sapphire), or other semiconductor materials. A multi-layer buffer layer 12 is epitaxially formed on the substrat...

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Abstract

The invention discloses an enhanced high electron mobility transistor and a manufacturing method thereof. The high electron mobility transistor comprises a buffer layer, a source electrode, a drain electrode, multiple P-N junctions and a grid electrode, wherein the buffer layer is epitaxial on a substrate; the source electrode and the drain electrode are formed on the buffer layer; the P-N junctions formed by multilayer stacks are formed on the buffer layer and between the source electrode and the drain electrode; the grid electrode is formed on the stacks of the P-N junctions; and each P-N junction is composed of a P-type semiconductor and an N-type semiconductor. The enhanced high electron mobility transistor and the manufacturing method thereof can improve the problem of poor efficiency of a depressed gate structure or an enhanced gallium nitride transistor manufactured by a carbon tetrafluoride plasma processing mode in the prior art, and greatly improve the threshold voltage of the enhanced high electron mobility transistor.

Description

technical field [0001] The invention relates to an enhanced high-electron-mobility transistor (High-Electron-Mobility Transistor, HEMT) technology, in particular to an enhanced high-electron-mobility transistor with P-N junction multilayer stacking to increase threshold voltage and a manufacturing method thereof. Background technique [0002] Gallium nitride high electron mobility transistors have been used in high-power components in recent years due to their high output power, high breakdown voltage, and high temperature resistance. However, because the GaN / AlGaN in its structure has a large amount of polarized charges and forms a two-dimensional electron gas (Two-Dimensional Electron Gas, 2DEG), this type of transistor usually operates in a depletion mode (Depletion Mode) , and it belongs to a normally-on (Normally On) transistor, and its threshold voltage (Threshold Voltage, VT) is a negative value. Therefore, even when the gate bias voltage of this type of transistor i...

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Application Information

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IPC IPC(8): H01L29/778H01L21/335H01L29/06H01L29/12
Inventor 张翼张嘉华林岳钦
Owner INFINITY COMM TECH INC
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