Preparation method of (103) oriented yttrium-barium-copper-oxide (YBa2Cu3O7-delta, YBCO) high-temperature superconductive film
A high-temperature superconducting thin film, yttrium-barium-copper-oxygen technology, which is applied in the usage of superconducting elements, superconducting devices, superconducting/high-conducting conductors, etc., can solve problems such as poor superconducting performance, rough surface of the film, and difficult costs , to achieve the effect of good crystallinity and smooth film surface
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
preparation example Construction
[0027] The invention discloses a preparation method of a (103) oriented yttrium barium copper oxide high temperature superconducting film, comprising:
[0028] The (100) oriented MgO single crystal substrate is placed on the sample stage of the growth chamber of the vacuum deposition device;
[0029] Take YBa 2 Cu 3 o 7-δ As the target material, the vacuum degree of the growth chamber was pumped to 10 -3 ~10 -6 Between Pa, the working gas oxygen is introduced into the growth chamber to a pressure of 2-10Pa, the temperature of the sample stage is heated to the range of 800-850°C, and the (100)-oriented MgO single crystal substrate is deposited and grown on the (100)-oriented MgO single crystal substrate. (103) oriented yttrium barium copper oxide high temperature superconducting thin film.
[0030] According to the present invention, after the epitaxially grown yttrium barium copper oxide high temperature superconducting thin film is deposited on the (100) oriented MgO sin...
Embodiment 1
[0039] Fix the cleaned (100) oriented MgO single crystal substrate on the heating platform of the PLD growth chamber, and fix the YBCO target on the target position;
[0040] Adjust the position of the (100) oriented MgO single crystal substrate and the target so that the distance between the target and the target is 4.5 cm, and the incident direction of the laser light is at an angle of 45° to the normal direction of the target surface;
[0041] Vacuum the PLD growth chamber so that the vacuum degree of the growth chamber is 6.0×10 -4 Pa;
[0042] Heat the substrate to 600°C at a rate of 20°C / min, then heat to 810°C at a rate of 10°C / min, feed in the working gas oxygen, adjust the intake valve and exhaust valve to keep the pressure in the vacuum chamber at 5Pa ;
[0043] Adjust the pulsed laser so that the laser energy density is 2J / cm 2 , with a frequency of 2 Hz, depositing an epitaxially grown yttrium-barium-copper-oxygen high-temperature superconducting thin film on th...
Embodiment 2
[0048] Fix the cleaned (100) oriented MgO single crystal substrate on the heating platform of the PLD growth chamber, and fix the YBCO target on the target position;
[0049] Adjust the position of the (100) oriented MgO single crystal substrate and the target so that the distance between the target and the target is 4.5 cm, and the incident direction of the laser light is at an angle of 45° to the normal direction of the target surface;
[0050] Vacuum the PLD growth chamber so that the vacuum degree of the growth chamber is 6.0×10 -4 Pa;
[0051] Heat the substrate to 600°C at a rate of 20°C / min, then heat to 830°C at a rate of 10°C / min, feed in the working gas oxygen, adjust the intake valve and exhaust valve to keep the pressure in the vacuum chamber at 5Pa ;
[0052] Adjust the pulsed laser so that the laser energy density is 2J / cm 2 , the frequency is 2 Hz, and the epitaxially grown yttrium barium copper oxide high temperature superconducting film is deposited on the ...
PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| surface roughness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More 