Low-voltage band-gap reference source generating circuit

Abstract

The invention relates to a low-voltage band-gap reference source generating circuit comprising a starting circuit and a band-gap reference source generating circuit electrically connected with the starting circuit, wherein the band-gap reference source generating circuit comprises an operational amplifier, a bias current generating circuit and a voltage division circuit; the output end of the operational amplifier is electrically connected with the bias current generating circuit; the positive phase input end and the negative phase input end of the operational amplifier are electrically connected with the voltage division circuit; the bias current generating circuit is electrically connected with the voltage division circuit; the voltage division circuit comprises a plurality of resistors and triodes; the plurality of resistors in the voltage division circuit are used for dividing voltage so as to add part of voltage on the emitters of the triodes; and part of band-gap voltage of material is output so as to generate a low-voltage band-gap reference source. Compared with a reference source generating circuit for compensating the higher order term of temperature, the low-voltage band-gap reference source generating circuit is simple in structure and less in power consumption, and saves the occupied space.

Description

Technical field [0001] The present invention involves the field of simulation integrated circuit design, which specifically involves a benchmark voltage source and corresponding startup circuits that provide low -voltage and low -temperature coefficients to the simulation circuit. [0002] Background technique [0003] The basic idea of the band gap benchmark source circuit is to superimize the current or voltage generated by a component with a positive temperature coefficient and negative temperature coefficient. [0004] Bar gap benchmark source circuit is widely used in A / D (Analog / Digital, simulation / number) and D / A (digital / analog, digital / simulation) data conversion system. Compared with other benchmarks, it has the following advantages: it has the following advantages:It can be compatible with the standard CMOS (Complementary Metal Oxide Semiconductor, complementary metal oxide semiconductor) process; temperature coefficient and power suppression ratio can meet the require...

AI Technical Summary

Problems solved by technology

At the same time, with the shrinking of the process size, the power supply voltage continues to decrease (the power supply voltage is less than 1.25V), and the traditional bandgap reference source can no longer work

[0006] In addition, the classic bandgap reference source generation circuit only compensates the first-order term of temperature, and its temperature coefficient is too high to meet the requirements of high-precision systems. However, the reference source generation circuit that compensates the high-order term of temperature, its Complex structure, large power consumption and area

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