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Grinding Wheel

A grinding wheel and abrasive tool technology, applied in abrasives, bonded grinding wheels, electrical components, etc., can solve problems such as cracks and quality degradation

Inactive Publication Date: 2012-04-04
DISCO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, in particular, if the free end of the annular base of the grinding wheel is annularly equipped with a plurality of grinding tools mainly composed of diamond abrasive grains and the sapphire wafer is ground with the grinding wheel, there may be There is such a problem that cracks (mushire) occur on the ground surface, and cracks will occur when the sapphire wafer is further ground to a thickness of 100 μm or less, resulting in a significant decrease in quality

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] The resin bond composed of phenolic resin is mixed with diamond abrasive grains with a particle size of 5 μm at a volume ratio of 10% to 20%, and B with a particle size of 1 μm at a volume ratio of 45% to 20%. 4 C particles, and shaped into a cuboid shape. It was sintered at a sintering temperature of 180° C. for about 8 hours to form a resin bonded abrasive tool.

[0050] A plurality of such resin bonded abrasive tools are secured to the free end of the annular base 24 to form a grinding wheel. The grinding wheel was assembled to the wheel base 20, and a sapphire wafer with a thickness of 300 μm was ground under the processing conditions that the spindle speed was 1000 rpm, the chuck table speed was 500 rpm, and the grinding wheel feed rate was 0.2 μm / sec. As a result, the sapphire wafer could be ground to a thickness of 90 μm without pinch and crack.

Embodiment 2

[0052] The metal bond with bronze as the main component is mixed with diamond abrasive grains with a particle size of 5 μm at a volume ratio of 10% to 20%, and HBN particles with a particle size of 1 μm at a volume ratio of 45% to 20%, and shaped into a rectangular parallelepiped shape. It was sintered at a sintering temperature of 700°C for about 1 hour to form a metal bonded abrasive tool.

[0053] A plurality of such metal-bonded abrasive tools are annularly secured to the free end of the annular base 24 to form a grinding wheel. The grinding wheel was mounted on the wheel base 20, and the sapphire wafer was ground under the same processing conditions as in Example 1. As a result, the sapphire wafer could be ground to a thickness of 90 μm without crushing and cracking.

Embodiment 3

[0055] The vitrified bond with silicon dioxide as the main component is mixed with diamond abrasive grains with a particle size of 5 μm at a volume ratio of 10% to 20%, and CBN particles with a particle size of 1 μm at a volume ratio of 45% to 20%, and shaped In the shape of a cuboid. The molded body was sintered at a sintering temperature of 700° C. for about 1 hour to form a vitrified bonded abrasive tool.

[0056] A plurality of such grinding tools are secured to the free end of the annular base 24 to form a grinding wheel. This grinding wheel was fitted to the wheel base 20, and the sapphire wafer was ground under the same conditions as in Example 1. As a result, the sapphire wafer could be ground to a thickness of 90 μm without cracking or cracking.

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Abstract

Provided is a grinding wheel, capable of grinding the hard and fragile material to the required thickness without causing cracking upon the surface of the grinding surface. The grinding wheel is used for grinding the to-be-processed objects. The grinding wheel is characterized by being equipped with an annular pedestal which comprises a wheel seat assembling surface to be assembled to the wheel seat, and a plurality of grinding tools having free ends annularly arranged to the annualar pedestal, with the grinding tool being formed by adding boron compound to the diamond grains. The boron compound is anyone selected from the group consisting of B4C (boron carbide), HBN (Hexagon boron nitride) and CBN (cubic boron nitride).

Description

technical field [0001] The invention relates to a grinding wheel suitable for grinding hard and brittle materials. Background technique [0002] A large number of devices such as IC (Integrated Circuit: Integrated Circuit) and LSI (Large Scale Integration: Large Scale Integrated Circuit) are formed on the surface, and each device is divided by predetermined division lines (spacers) formed in a grid pattern. The opened silicon wafer is divided into individual devices by cutting the dividing line with a dicing device equipped with a cutting tool, and the divided devices are used in electrical equipment such as mobile phones and personal computers. [0003] In addition, regarding a sapphire wafer on which a large number of light-emitting devices such as LEDs (light-emitting diodes) and LDs (laser diodes) are formed on the surface, and each light-emitting device is divided by a predetermined division line (separation lane), it uses laser irradiation The light-emitting device is...

Claims

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Application Information

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IPC IPC(8): B24D3/00
CPCB24D3/28B24D7/06C25D1/04H01L21/30625
Inventor 马路良吾大岛龙司
Owner DISCO CORP
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