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Bismuth telluride-based thermoelectric material and preparation method thereof

A technology of thermoelectric materials and raw materials, applied in the direction of thermoelectric device lead-out wire materials, thermoelectric device manufacturing/processing, etc., can solve the problems of easy damage of nanostructures, limited development of thermoelectric materials, difficult processing, etc., and achieve thermoelectric performance Outstanding, high density, simple preparation technology

Active Publication Date: 2015-06-10
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, nano-Bi 2 Te 3 The development of thermoelectric materials based on

Method used

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  • Bismuth telluride-based thermoelectric material and preparation method thereof
  • Bismuth telluride-based thermoelectric material and preparation method thereof
  • Bismuth telluride-based thermoelectric material and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] Embodiment 1: one-step synthetic method synthesizes Bi 38-x (InSb) x Te 62

[0015] The optional elemental raw materials can be selected according to Bi 38-x (InSb) x Te 62 (0.6≤x≤0.8) chemical formula content weighing. Put it into a sintered flat quartz tube at the bottom for vacuum line sealing, then put it vertically into a muffle furnace, sinter at 780°C for 2 to 3 days, and then slowly cool down to 530°C to obtain Bi 38-x (InSb) x Te 62 .

Embodiment 2

[0016] Example 2: Cutting and polishing sample Bi 38-x (InSb) x Te 62 Perform thermoelectric performance test

[0017] The Bi prepared by the above method 38-x (InSb) x Te 62 Block samples were cut with a diamond cutter and then sanded. The sample is first cut into basic discs and cuboid samples with a cutting machine, and then polished with sandpaper; the thickness of the disc sample is 1.93mm, and the diameter is 10.17mm. The cross-sectional area of ​​the cuboid is 2.16 × 2.16 mm 2 , The thermal diffusivity of the wafer was tested on a Netzsch LFA457 device, using pyrocream 9606 as a standard sample, and tested under an argon atmosphere. The electrical conductivity and Seebeck coefficient were tested on ULVAC ZEM-3.

Embodiment 3

[0018] Embodiment 3: Sample Bi 38-x (InSb) x Te 62 The thermoelectric performance test results of

[0019] The above test results show that the resistivity increases with the increase of temperature, from 8.03*10 at room temperature -6 Ω m increases to 9.99*10 at 447K -6 Ωm. The absolute value of the Seebeck coefficient first increases with the increase of temperature, reaches a maximum of 234μV / K at 323K, and then decreases. A negative Seebeck coefficient indicates that Bi 38-δ (InSb) δ Te 62 Most of the carriers are electrons. The thermal conductivity increases with the increase of temperature, and the thermal conductivity near room temperature is 1.9W / m.K. According to the thermoelectric figure of merit formula: Z=S 2 σ / K, where S is the Seebeck coefficient of the material, σ is the electrical conductivity, K is the thermal conductivity, and Bi can be obtained 38-x (InSb) x Te 62 The ZT value of the sample is 1.108 at 323K.

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Abstract

The invention relates to a bismuth telluride-based thermoelectric material Bi<38 minus x> (InSb) <x> Te<62> and a preparation method of the bismuth telluride-based thermoelectric material Bi<38-x> (InSb) <x> Te<62> and belongs to the field of inorganic materials. The bismuth telluride-based thermoelectric material is synthesized by adopting a one-step synthesis method. The synthesis conditions are shown as follows: reacting for 2-3 days at a temperature of 780 DEG C and then slowly cooling to 530 DEG C to obtain. In the invention, the compound Bi<38 minus x> (InSb) <x> Te<62> is characterized in that the nominal components of tellurium in the bismuth telluride occupy 62 percent, and a small quantity of In and Sb is doped in bismuth, wherein x is more than or equal to 0.6 and is less than or equal to 0.8. The invention has the advantages that compared with a traditional simple solid-melting and doping method, the preparation method is simple, a block material with high density is directly obtained, and the ZT value of the bismuth telluride-based thermoelectric material Bi<38 minus x> (InSb) <x> Te<62> obtained by the invention can reach 1.108 under the condition of 323K.

Description

technical field [0001] The invention relates to a bismuth telluride-based thermoelectric material Bi 38-x (InSb) x Te 62 The invention and a preparation method thereof belong to the field of inorganic materials. Background technique [0002] Bi 2 Te 3 The base compound is the earliest thermoelectric material discovered and studied, and it is also the most widely used commercial medium-temperature thermoelectric material. The limit of its thermoelectric performance ZT Has been around ~1 for a long time. With the development of nanotechnology, Bi 2 Te 3 The focus of research on based thermoelectric materials has also shifted to nanoscale Bi 2 Te 3 Preparation of base thermoelectric materials. Preparation of Bi by hydrothermal method 2 Te 3 nanotubes, and electrochemically deposited Bi 2 Te 3 Based on nanowire arrays, laser pulses take the opportunity to obtain metal-organic chemical vapor deposition and other methods to prepare Bi 2 Te 3 film. Among them,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L35/16H01L35/34H10N10/852H10N10/01
Inventor 陈玲吴立明陈红
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI