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Preparation method of high-purity titanium powder for large-scale integrated circuit

A large-scale integrated circuit, high-purity technology, applied in the field of powder metallurgy, can solve the problems of inability to meet the production of large-scale integrated circuits, and the preparation method of high-purity titanium powder cannot be found, so as to reduce temperature, reduce energy consumption, and reduce energy consumption. low battery effect

Inactive Publication Date: 2012-05-02
CHANGZHOU 69 NEW MATERIAL TECH CO LTD
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Problems solved by technology

Although the titanium powder prepared by this invention can meet the requirements of -325 purpose, the purity can only reach 99.5%, and the oxygen element content is 2000ppm, therefore, it cannot meet the requirements of large-scale integrated circuit production
[0013] Can not find the preparation method that can satisfy the high-purity titanium powder that large-scale integrated circuit is used in the disclosed technology after retrieval

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  • Preparation method of high-purity titanium powder for large-scale integrated circuit

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specific Embodiment approach

[0027] The first step is raw material preparation: using titanium crystals, titanium rods or titanium targets with a purity greater than 99.995% as raw materials, the raw materials must be cleaned and dried to ensure that there is no pollution and impurities;

[0028] In the second step, the raw materials obtained in the first step are put into the hydrogenation furnace and vacuumized to 3×10 -2 Pa, while heating the temperature to 500°C-550°C, pouring in hydrogen with a purity greater than 99.999% for hydrogenation reaction to generate titanium hydride;

[0029] The third step is to carry out ball milling of titanium hydride to ensure that the particle size diameter of the titanium powder is controlled at 8-10 microns, and the ball milling takes about 8-10 hours. The grinding ball is pure titanium with a purity greater than 99.995% to avoid contamination by other metal impurities. During ball milling, the inner cavity of the ball mill cylinder must be evacuated and then fille...

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Abstract

The invention discloses a preparation method of a high-purity titanium powder for a large-scale integrated circuit. The preparation method comprises the following steps of: preparation and treatment of a high-purity titanium raw material, generation of titanium hydride through hydrogenation under a vacuum condition, vacuum ball-milling, vacuum dehydrogenation and vacuum graded package. The purity of the obtained high-purity titanium powder is more than or equal to 99.99 percent, the average diameter of the titanium powder is 8-10 micrometers, the maximum particle diameter is less than or equal to 20 micrometers, the oxygen content is less than or equal to 1500ppm, the nitrogen content is less than or equal to 400ppm, and the hydrogen content is less than or equal to 300ppm, wherein the vacuum hydrogenation is carried out at 400-550 DEG C, and the vacuum dehydrogenation is carried out at 350-450 DEG C only. The titanium powder prepared by using the preparation method disclosed by the invention has the advantages of high purity, small particle size and low detrimental impurity element content and completely accords with the production requirements of the large-scale integrated circuit.

Description

Technical field: [0001] The invention belongs to the field of powder metallurgy, in particular to the field of preparation methods of titanium powder. Background technique: [0002] Titanium powder refers to metallic titanium particles with a size less than 1 mm. Since titanium powder has a larger surface area than metal titanium blocks, titanium powder is more active than metal titanium blocks, and is more likely to react with other elements or compounds, especially easier to oxidize. [0003] Titanium powder has been widely used in many fields. Especially in aerospace, automobile industry, sports industry and other fields, it has broad prospects. In the field of large-scale integrated circuits, tungsten-titanium alloy is widely used at present, and its titanium content is about 10%. The alloy forms the isolation layer film in the integrated circuit after sputtering. The tungsten-titanium alloy used in the production process of large-scale integrated circuits requires hi...

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Application Information

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IPC IPC(8): B22F9/16
Inventor 林发祥郭蔚郭建平薛丹斌
Owner CHANGZHOU 69 NEW MATERIAL TECH CO LTD
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