Manufacturing method of mechanical uniaxial strain SOI (silicon-on-insulator) wafer

Abstract

The invention discloses a manufacturing method of a mechanical uniaxial strain SOI (silicon-on-insulator) wafer. The method comprises the following steps: 1) putting an SOI wafer on a cambered bending table, wherein the top layer (Si layer surface) of the SOI wafer faces up or down; 2) respectively horizontally putting two cylindrical stainless steel pressure bars on both ends of the SOI wafer, wherein the two cylindrical stainless steel pressure bars are respectively 1cm away from the edge of the SOI wafer; 3) slowly rotating a screw cap which connects the pressure bars, so that the SOI wafer is gradually bent along the cambered table until the SOI wafer is completely laminated on the cambered table; 4) putting the cambered bending table carrying the SOI wafer in an annealing furnace, and carrying out annealing; 5) after the annealing finishes, slowly cooling to room temperature, and taking out the cambered bending table carrying the SOI wafer; and 6) rotating the screw cap which connects the pressure bars, and slowly elevating the pressure bars until the bent SOI wafer restores to the original state. The invention has the advantages of 1) favorable strain effect, 2) small surface roughness, 3) fewer surface defects, 4) favorable thermal properties, 5) high electric properties, 6) high yield, 7) wide annealing temperature range, 8) simple manufacturing technique, 9) fewer manufacturing devices which can be self-made, 10) low manufacturing cost and 11) accessible raw materials.

Description

technical field

[0001] The invention belongs to the technical field of microelectronics, and relates to a semiconductor substrate material manufacturing process technology, specifically a method for manufacturing a uniaxial strain SOI (Silicon On Insulator, silicon on an insulating layer) wafer, which can be used for making ultra-high speed, low SOI wafers required for power consumption, radiation-resistant semiconductor devices and integrated circuits can significantly improve the electron mobility and hole mobility of traditional SOI wafers, and overcome the high-field degradation of traditional biaxial strain SOI mobility enhancement. Compared with the existing uniaxial strain SOI technology, the invention has the advantages of high strain degree, simple process, high yield and low cost. Background technique

[0002] Compared with bulk Si technology, SOI technology has the advantages of high speed, low power consumption, high integration density, small parasitic capacitan...

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