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Multilayer zno single crystal scintillator and method for manufacturing same

A manufacturing method and scintillator technology, which is applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of slow film forming speed and time-consuming, and achieve the effect of increasing the amount of luminescence

Inactive Publication Date: 2012-05-09
MITSUBISHI GAS CHEM CO INC +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0013] On the other hand, if gas phase growth methods such as laser pulse deposition (PLD), MBE, and MOCVD are used, high-quality ZnO single crystals can be grown. The disadvantage of taking a lot of time for ZnO single crystal with a film thickness above
In the case of ZnO single crystals, α-rays and electron beams have a penetration depth of about 5 to 50 μm, and there is a problem that ZnO single crystals cannot be grown to a thickness sufficient to block α-rays and electron beams in a short period of time by vapor phase growth.

Method used

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  • Multilayer zno single crystal scintillator and method for manufacturing same
  • Multilayer zno single crystal scintillator and method for manufacturing same
  • Multilayer zno single crystal scintillator and method for manufacturing same

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no. 1 Embodiment approach

[0033] The first embodiment of the present invention is a layered ZnO-based single crystal scintillator characterized by comprising two or more layers of ZnO-based mixed crystals (ZnO-based mixed crystals (ZnO) with different band gaps 1-x-y Mg x Cd y ) O laminate, the ZnO-based mixed crystal layer with a small band gap has an ionizing radiation irradiation surface and has a thickness of 5 μm to 50 μm, 0≤x≤0.145, 0≤y≤0.07.

[0034] As claimed by the inventors of the present invention, the band gap can be controlled to 3.30 to 3.54 eV by mixed crystallization of Zn and Mg. On the other hand, by mixing crystallization of Zn and Cd, the band gap can be controlled to 3.00 to 3.30 eV (Non-Patent Document 5: Appl. Phys. Lett. 78 1237 (2001)). Therefore, two or more layers of ZnO-based mixed crystals (ZnO-based mixed crystals with different band gaps) are formed. 1-x-y Mg x Cd y ) O layered body, ionizing radiation is irradiated from the surface (irradiated surface) of the layer...

no. 2 Embodiment approach

[0041] The second embodiment of the present invention is the above-mentioned laminated ZnO-based single crystal scintillator containing at least one selected from the group consisting of Al, Ga, In, H, F, and lanthanoid elements.

[0042] A ZnO-based single crystal has n-type crystal defects such as inter-lattice zinc and oxygen vacancies. When ionizing radiation such as alpha rays or electron beams is irradiated on the crystal defects, light emission with a long decay lifetime occurs in the wavelength region of 450 to 600 nm. Since the fluorescence lifetime of such long-wavelength light emission is long, it has the disadvantage of impairing the stability of the discrimination function of radiation detection.

[0043] On the other hand, if a ZnO single crystal doped with a group III element, hydrogen, fluorine, and a lanthanoid element is used as in the present embodiment, an exciton emission type ZnO single crystal with less light emission at 450 to 600 nm can be produced. On...

no. 3 Embodiment approach

[0045] A third embodiment of the present invention is a method for producing a layered ZnO-based single crystal scintillator, wherein the layered ZnO-based single crystal scintillator is two or more layers of ZnO-based mixed crystals (ZnO-based mixed crystals with different band gaps) 1-x-y Mg x Cd y ) O laminate, the ZnO-based mixed crystal layer with a small band gap has a surface irradiated with ionizing radiation and has a thickness of 5 μm to 50 μm, 0≤x≤0.145, 0≤y≤0.07, and the manufacturing method is characterized in that: At least one layer in the above-mentioned laminate is formed by a liquid phase epitaxy growth method by directly contacting a substrate with ZnO, MgO and CdO as solutes and PbO and Bi as solvents 2 O 3 Mixed and melted (mixed and / or melted), ZnO-based mixed crystals (ZnO 1-x-y Mg x Cd y )O grown on the substrate.

[0046] That is, in this method, two or more layers of ZnO-based mixed crystals (ZnO-based mixed crystals (ZnO) having different band ...

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Abstract

Provided are a multilayer ZnO single crystal scintillator wherein the light emitting quantity is increased, and a method for manufacturing such scintillator. A multilayer body composed of ZnO semiconductor layers having different band gaps is manufactured, and a layer having a small band gap is made to have a thickness that permits ionization radiation, such as a rays and electronic rays, to enter the layer, thereby the light emitting quantity of the multilayer ZnO single crystal scintillator is greatly increased.

Description

technical field [0001] The present invention relates to a layered ZnO-based single crystal used as a scintillator in a scintillation detector. Background technique [0002] As a device for measuring radiation, there is a scintillation detector. The structure of a typical scintillation detector is shown in figure 1 . figure 1 Among them, when radiation enters the scintillation detector 100 , fluorescence is generated in the scintillation crystal 110 corresponding to the incident radiation, and the radiation can be detected by detecting the light with a photomultiplier tube and the semiconductor detector 120 . [0003] As an alternative to next-generation scintillators and devices, TOF (Time of Flight) method has been proposed, and research has been carried out centered on fluoride. For time resolution, the shorter the fluorescence lifetime the better the resolution, the BaF 2 closest to ideal. However, BaF 2 Therefore, there are problems such as the need for an expensiv...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/00C09K11/02C09K11/54C30B19/02C30B29/22C30B33/00G01T1/20G01T1/202
CPCC30B19/061C30B29/16C30B29/22C30B19/02G01T1/202C09K11/54Y10T428/24942C09K11/00C09K11/02
Inventor 关和秀幸小林纯宫本美幸德竹大地吉川彰柳田健之
Owner MITSUBISHI GAS CHEM CO INC
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