Carbide composite phase change storage material and preparation method thereof

Abstract

The invention discloses a carbide composite phase change storage material, which is formed by carbide and phase change materials through compounding. The carbide has the effect of separating the phase change materials into nanometer level island regions, so the growth of the phase change materials is inhibited by the carbide, the grain boundary number is greatly increased, the resistivity of composite materials is improved, and the composite materials have good phase change characteristic and thermal stability. In addition, the amorphous resistance value of the phase change materials can be regulated through a method of improving the carbide proportion, and the problem of excessive threshold current or excessive power consumption caused by too low amorphous resistance is solved.

Description

technical field [0001] The invention relates to a phase-change storage material and a preparation method, in particular to a carbide composite phase-change storage material and a preparation method, and belongs to the related field of semiconductor memory. Background technique [0002] In 1968, Stanford R. Ovshinsky first reported in the article of Physical Review Letters that in chalcogenides (Ge 10 Si 12 As 30 Te 48 ) found a transition phenomenon between high and low resistance values ​​excited by an electric field. However, it is only in the last ten years that chalcogenides have been really applied to electrical storage devices. This is all due to the development of the microelectronics industry in recent years, which provides a technical premise for the realization of electrical storage devices, because only in the micron or even nanometer In the case of scale, the power consumption required for the phase transition of chalcogenide materials can be greatly reduced,...

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Problems solved by technology

However, the main phase change material of the phase change memory also has some defects, such as the long time required for the transformation from the amorphous state to the crystal state, and the excessive current required to transform the crystal state into the amorphous state.

It is these deficiencies that hinder the promotion of phase change memory to the market

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