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Semiconductor device, active matrix substrate, and display device

A semiconductor and substrate technology, applied in the field of active matrix substrates and display devices, can solve problems such as flow and achieve the effect of reducing leakage current

Inactive Publication Date: 2012-05-23
SHARP KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

That is, even if the gate voltage is 0V, leakage current may flow depending on the potential of the light-shielding film

Method used

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  • Semiconductor device, active matrix substrate, and display device
  • Semiconductor device, active matrix substrate, and display device
  • Semiconductor device, active matrix substrate, and display device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment approach

[0072] figure 1 It is a cross-sectional view showing the configuration of the liquid crystal display device of the first embodiment. exist figure 1 Among them, the liquid crystal display device 1 has: figure 1 The upper side is the liquid crystal panel 2 on the visual recognition side (display surface side); and the backlight unit 3 is disposed on the non-display surface side of the liquid crystal panel 2 ( figure 1 The lower side of the liquid crystal panel 2 is irradiated with illumination light.

[0073] The liquid crystal panel 2 is provided with: a color filter substrate 4 and an active matrix substrate 5, which constitute a pair of substrates; . A liquid crystal layer (not shown) is provided between the color filter substrate 4 and the active matrix substrate 5 . In addition, for the color filter substrate 4 and the active matrix substrate 5 , a flat transparent glass material or a transparent synthetic resin such as acrylic resin is used. Resin films such as TAC (...

no. 2 Embodiment approach

[0128] Figure 8 It is a plan view showing a schematic configuration of a main part of a switch unit according to the second embodiment. Figure 9 yes Figure 8 IX-IX line sectional view in. In the drawings, the main difference between the present embodiment and the above-mentioned first embodiment is that the bottom gate electrode is formed not in a rectangular shape but in a comb-tooth shape. In addition, the same code|symbol is attached|subjected to the element common to the said 1st Embodiment, and overlapping description is abbreviate|omitted.

[0129] That is, if Figure 8 As shown, in the switch portion 18 of the present embodiment, the bottom gate electrode 37 is formed in a comb-tooth shape, and is provided in the carrier generation region (depletion region, that is, the drain junction portion) in the silicon layer SL that generates light leakage current. nearby area).

[0130] Specifically, such as Figure 9 As shown, the bottom gate electrode 37 is divided int...

no. 3 Embodiment approach

[0135] Figure 10 It is a circuit diagram showing the equivalent circuit of the switch part of 3rd Embodiment. Figure 11 is showing Figure 10 A plan view showing a schematic configuration of the main parts of the switch unit shown. Figure 12 (a) and Figure 12 (b) respectively Figure 11 The XIIa-XIIa line sectional view and the XIIb-XIIb line sectional view. In the figure, the main difference between the present embodiment and the above-mentioned first embodiment is that, with respect to a thin film transistor having a top gate electrode (main gate electrode) and a bottom gate electrode (auxiliary gate electrode), series connection A thin film transistor having only a top gate electrode (transistor of top gate structure). In addition, the same code|symbol is attached|subjected to the element common to the said 1st Embodiment, and overlapping description is abbreviate|omitted.

[0136] That is, if Figure 10 As shown, in the switch unit 18 of this embodiment, only th...

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Abstract

Disclosed is a semiconductor device which has a reduced leak current and is easily manufactured, while preventing the structure from being complicated and the dimensions of the device from increasing. An active matrix substrate using the semiconductor device, and a display device using the semiconductor device are also disclosed. The switching section (18) (semiconductor device) is provided with thin film transistors (Tr1, Tr2) having top gate electrodes (g1, g2) (main gate electrodes) and bottom gate electrodes (21) (auxiliary gate electrodes), respectively. The switching section is also provided with a silicon layer (SL) (semiconductor layer), which is provided between top gate electrodes (g1, g2) and the bottom gate electrodes (21), and a light shielding film, which shields a carrier generating region formed on the on the silicon layer from light. The potentials of the top gate electrodes (g1, g2) are controlled by means of gate signals supplied via signal wiring, and the potentials of the bottom gate electrodes (21) are determined corresponding to capacitive coupling between the bottom gate electrodes (21) and the top gate electrodes (g1, g2).

Description

technical field [0001] The present invention relates to a semiconductor device including a transistor, an active matrix substrate using the semiconductor device, and a display device. Background technique [0002] In recent years, for example, liquid crystal display devices have been widely used in liquid crystal televisions, monitors, mobile phones, and the like as flat panel displays that are thinner and lighter than conventional Braun tubes. In such a liquid crystal display device, a plurality of data wirings (source wirings) and a plurality of scanning wirings (gate wirings) are wired in a matrix. In addition, the liquid crystal display device includes an active matrix substrate in which pixels are arranged in a matrix, and the pixels include thin-film transistors (TFT: Thin-Film Transistor, hereinafter simply referred to as "TFT") located near intersections of data lines and scan lines. ) and other switching elements and pixel electrodes connected to the switching elem...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786G02F1/1368G09F9/30H01L21/28H01L21/8234H01L27/088H01L29/423H01L29/49
CPCH01L29/78648H01L29/78645H01L29/78633G02F1/13624H01L29/42384
Inventor 北角英人
Owner SHARP KK