Chemically mechanical polishing liquid

A chemical mechanical and polishing liquid technology, applied in the direction of polishing compositions containing abrasives, etc., can solve the problems of high price, high requirements, precipitation and stratification of polishing liquid, etc., and achieve the effect of good stability and long precipitation time

Active Publication Date: 2014-12-03
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] At present, cerium oxide polishing liquid is widely used in chip factories, and there are many related technical patents, such as US patents US7109117B2 and US7364600B2. This type of polishing liquid has a fast polishing speed and a relatively high selection of silicon nitride. It is a relatively mature industrial product. However, the polishing liquid is prone to precipitation and stratification, and has high requirements for online equipment. In addition, it is expensive. In the context of reducing consumption and increasing efficiency in the global chip industry, cost reduction is also one of the requirements for polishing liquid.

Method used

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  • Chemically mechanical polishing liquid
  • Chemically mechanical polishing liquid

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Embodiment 1～7

[0022]

[0023] *:R f CH 2 CH 2 O) x PO(ONH 4 + ) y , where, x+y=3, R f = CF 3 CF 2 (CF 2 CF 2 ) n .Its n=2-6

[0024] As can be seen from the data in the above table, the abrasive particles of this patent have a higher HDP polishing rate and a higher silicon nitride rate, and the removal rate of silicon nitride drops significantly after adding a special active agent, while HDP silicon dioxide There is almost no impact, and the polishing selection ratio of the two is adjusted to 10-20, which is beneficial to eliminate the step height of silicon dioxide, realize planarization, and stop at the silicon nitride layer to form shallow trench isolation.

[0025] The polishing liquid of the invention has a higher HDP removal rate and a higher selectivity ratio to silicon nitride than the commercially available products, and the polishing liquid has a longer precipitation time than the commercially available products, better stability and low cost.

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Abstract

The invention discloses a chemically mechanical polishing liquid for shallow-trench isolation. The polishing liquid at least contains a silicon-based abrasive, an anionic surfactant and a pH conditioning agent, and has high removal rate of silica and low removal rate of silicon nitride. By the adoption of the polishing liquid, a polished surface is flat, bright and clean. The invention has good stability and is suitable for chemically mechanical planarization of shallow-trench isolation.

Description

technical field [0001] The invention relates to a chemical mechanical polishing fluid. Background technique [0002] The manufacture of CMOS chips usually integrates hundreds of millions of active devices (including NMOS and PMOS) on silicon substrate materials, and then designs various circuits to realize complex logic functions and analog functions. To ensure electrical isolation between different devices, it is necessary to use insulating materials to isolate them. Shallow trench isolation (STI) is an industrialized method to form isolation regions between active devices. This isolation method is to grow a layer of silicon dioxide on the substrate, and then deposit a layer of silicon nitride film, the typical thickness of the two is 10-20nm and 50-100nm, and then apply glue, Expose and develop as shown below. [0003] It can be seen from the figure that steps (5)-(6) need to use CMP planarization process, which requires rapid removal of silicon dioxide and stops on sili...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09G1/02
Inventor 宋伟红姚颖
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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