Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Rapid propagation method for Leersia hexandra Swartz

A node and naphthalene acetic acid technology, applied in the field of chromium-contaminated phytoremediation, can solve the problems of not being able to meet large-scale engineering repairs, difficulty in distinguishing individual seedlings, and low seed germination rate, achieving no seasonal influence, shortening the growth cycle, The effect of quick process

Inactive Publication Date: 2012-06-13
GUILIN UNIVERSITY OF TECHNOLOGY
View PDF0 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the plant also has certain limitations in practical application.
This is mainly reflected in: (1) the number of components is complex, and it is difficult to distinguish individual seedlings; (2) the seed setting rate is not high, and the seed germination rate is low; (3) it can only be seeded once a year, which cannot meet large-scale engineering repairs

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Rapid propagation method for Leersia hexandra Swartz
  • Rapid propagation method for Leersia hexandra Swartz
  • Rapid propagation method for Leersia hexandra Swartz

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0012] Choose 50 vigorously growing Lishihe plants with multiple nodes, at the second node, cut the Lishihe stem tip, and keep 1.0-1.5cm stem section at the end of the node (such as figure 1 shown). The blade destroys the epidermis of the nodes along the periphery, exposing the cambium; the terminal nodes of Lishihe are immersed in 5 mg / L naphthalene acetic acid solution and placed in a dark artificial climate box. After 6 hours, the naphthalene acetic acid solution at the end of Lishihe is cleaned with distilled water Clean, 10 plants are packaged in a group of improved hoagland nutrient solution for cultivation, and the cultivation environment is set as follows: light intensity 2000LX, relative humidity 75%, daytime 15h / d, temperature 25±1℃, nighttime 9h / d, temperature 20±1 ℃. Such as figure 2 As shown, after cultivating for 7 days, the nodes will take root and grow seedlings. The rooted Lishihe is transplanted into the soil and cultivated in a natural environment, and w...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a rapid propagation method for Leersia hexandra Swartz, which includes: selecting a plant of Leersia hexandra Swartz with a plurality of joints, cutting a stem tip at the second joint of the Leersia hexandra Swartz, reserving a 1.0-1.5cm stem at the tail end of the second joint, using a blade to peripherally damage epidermis of the joint to expose a forming layer; soaking the tail joint of the plant of Leersia hexandra Swartz in naphthylacetic acid solution 5mg / L and allowing to stand in a dark artificial climate box, cleaning the naphthylacetic acid solution at the tail end of the plant of Leersia hexandra Swartz with distilled water after six hours, and cultivating the plant in modified Hoagland nutrient solution, wherein the cultivating environment includes illumination intensity 2000LX, relative humidity 70-80%, day time 15h / d with temperature 25 + / -1 DEG C, and night time 9h / d with temperature 20+ / -1 DEG C; cultivating for 7-10 days to allow the joint to root and sprout, transplanting the rooted plant of Leersia hexandra Swartz to soil, cultivating in the natural environment, and watering to maintain a seedling substrate moist. The rapid propagation method is simple, rapid and low in cost, and a new way of obtaining restorative materials for plants in chromium polluted soil or water is provided.

Description

technical field [0001] The invention belongs to the technical field of chromium-polluted phytoremediation, and in particular relates to a method for rapid propagation of a hyperaccumulator-Leersia hexandra Swartz that can be used for chromium-polluted remediation. Background technique [0002] Chromium is a widely used industrial raw material, and electroplating, leather processing, anticorrosion, and mining and smelting of serpentine mines will cause chromium pollution (Shanker et al., "Metallomics" 2009, Vol. 1, pp. 375-383). Chromium pollution not only leads to land degradation, crop yield reduction and quality decline, but more importantly, it enters the human body through the food chain, posing risks to human health. Excessive chromium will have obvious carcinogenic and teratogenic effects on the human body (Shrivastava et al., "Microbiology", vol. 34, pp. 1-7, 2002). Therefore, chromium is listed as a key object of prevention and control worldwide (Zayed and Terry, "P...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): A01H4/00
Inventor 张学洪刘杰黄晓武
Owner GUILIN UNIVERSITY OF TECHNOLOGY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products