Preparation method of nitrogen oxide sensor component based on WO3 single-crystal particle

Abstract

The invention discloses a preparation method of a nitrogen oxide sensor component based on WO3 single-crystal particles, which comprises: (1) preparing tungsten hexachloride solution; (2) adjusting the molar concentration of tungsten hexachloride to be 0.003-0.014M; (3) synthesizing quasi-oriented tungsten oxide nanowires; (4) preparing nanowire-based sensitive slurry; and (5) preparing the nitrogen oxide sensor component based on the WO3 single-crystal particles. The prepared WO3 single crystal has a pure single inclined-phase structure, and the single-crystal particles have a complete structure, a high degree of crystallization, a clear crystal face and regular morphology. By adopting the gas sensor based on the single-crystal tungsten trioxide material, high-sensitivity and high-selectivity rapid response can be realized for NO2 at the level of ppm to ppb.

Description

technical field [0001] The invention relates to the technical field of gas sensors, in particular to a WO-based 3 A method for preparing a nitrogen oxide sensor element of single crystal particles. Background technique [0002] Nitrogen oxides (NO x ) is a typical air pollutant that can cause serious environmental problems such as acid rain and photochemical smog, and pose a huge threat to human health. Research for NO x High-performance gas sensor materials and devices for accurate detection and monitoring are of great significance to the protection of the environment and human health. WO 3 It is a wide-bandgap n-type semiconductor material, which is widely used in the fields of gas sensors, photoelectric devices and photocatalysis, especially as a high-performance gas-sensing material, which can be widely used in various toxic and dangerous gases such as NO X 、H 2 S, Cl 2 , NH 3 and other high-sensitivity detection. Existing studies have shown that WO 3 It is a ...

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Problems solved by technology

Polycrystalline WO 3 The presence of a large number of grain boundaries in the gas-sensing layer leads to slow electron charge transfer, which affects the response rate of the gas-sensing element, and the existence of a large number of grain boundary barriers also leads to a high baseline resistance of the gas-sensing film layer, which affects the electrical properties of the device. The test brings great difficulties, which limits the improvement of device sensitivity

Polycrystalline WO 3 Sensitive layer structure is further improving WO 3 There are obvious limitations in the sensitivity and response characteristics of the base gas sensor

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