Molecular beam epitaxial growth method of InAs/GaAsSb quantum dots

A technology of molecular beam epitaxy and growth method, which is applied in the field of semiconductor optoelectronic device preparation, can solve problems such as segregation, complex problems, poor controllability of antimonide alloy growth components, etc., and achieve the effect of obvious quantum effect

Inactive Publication Date: 2012-06-20
NORTH CHINA ELECTRIC POWER UNIV (BAODING)
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  • Abstract
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AI Technical Summary

Problems solved by technology

[0003] At present, people use antimonide alloys to design many device structures with unique properties, but there are still some factors that limit the development and application of antimonide devices, including poor controllability of the growth components of antimonide alloys, severe segregation during epitaxial growth of antimonides, Antimony elements are easy to accumulate on the epitaxial surface, which has a great impact on the migration and diffusion of atoms on the surface, as well as subsequent device process optimization.
In addition, during the epitaxial growth of GaAsSb alloys, the adhesion coefficients of As and Sb differ greatly, and this difference is significantly affected by temperature: at lower temperatures, the composition of the alloy is mainly determined by the As beam, while at high temperatures it is mainly determined by Sb beam flow is determined; at the same time, because MBE growth cannot achieve sudden temperature changes, especially when epitaxial wafers are grown with In, the precise temperature cannot be known, which makes the control of antimonide alloy composition a technical problem
This is also mixed with issues such as As / Sb interchange, which makes the problem more complicated

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] a.GaAs substrate deoxidation treatment: use solid source MBE equipment, As, Sb cracking source beam flow to As 4 and Sb 4 Mainly. Use the 'epi-ready' grade semi-insulating GaAs (100) substrate of Tongmei Crystal Company, heat it to 400 ° C, and keep it for 40 minutes for substrate deoxidation treatment.

[0021] b. Growth of GaAs buffer layer: After the substrate is completely deoxidized, a 200nm-thick GaAs buffer layer is first grown to reduce the influence of substrate surface quality on subsequent growth; the growth rate of the GaAs buffer layer is controlled at 1 μm / h, and the growth temperature is at 580°C, V / III ratio is 20.

[0022] c. Preparation of GaAsSb epitaxial layer: After the growth of the buffer layer is completed, close the Ga source shutter, while maintaining the As protective atmosphere, and lower the substrate to 480°C. After the temperature reaches, close the As shutter, and open the Sb valve and shutter, so that The GaAs surface of the sample wa...

Embodiment 2

[0026] a.GaAs substrate deoxidation treatment: use solid source MBE equipment, As, Sb cracking source beam flow to As 4 and Sb 4 Mainly, use the 'epi-ready' grade semi-insulating GaAs (100) substrate of Tongmei Crystal Company, heat it to 390 ° C, and keep it for 45 minutes for substrate deoxidation treatment.

[0027] b. Growth of GaAs buffer layer: After the substrate is completely deoxidized, a 220nm thick GaAs buffer layer is first grown to reduce the influence of substrate surface quality on subsequent growth. The growth rate of the GaAs buffer layer was controlled at 0.8 μm / h, the growth temperature was 585°C, and the V / III ratio was 22.

[0028] c. Preparation of GaAsSb epitaxial layer: After the growth of the buffer layer is completed, close the Ga source shutter while maintaining the As protection atmosphere, and lower the substrate to 500°C. After the temperature is reached, the As shutter is closed, and the Sb valve and shutter are opened, so that the GaAs surface...

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PUM

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Abstract

The invention discloses a molecular beam epitaxial growth method of InAs / GaAsSb quantum dots, belonging to the field of the preparation technology of photoelectric devices. The method comprises the following steps of: firstly preparing a GaAsSb alloy thin layer with low antimony content; and then preparing stress self-assembly GaAs-based InAs / GaAsSb quantum dots by use of the molecular beam epitaxial growth technology for growing InAs quantum dots. In the method, the growth process is determined by thermodynamic parameters, the prepared GaAsSb alloy suffers little influence of technological conditions, the components are easy to control, controllable-density InAs / GaAsSb quantum dots are obtained, and a foundation is laid for the application of antimonide alloy-based InAs quantum dots in the fields of solar cells, photoelectric detectors and the like.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronic device preparation, in particular to a molecular beam epitaxial growth method of InAs / GaAsSb quantum dots self-assembled by stress. Background technique [0002] Stressed self-assembled quantum dots are a type of semiconductor quantum dots that are most easily integrated with existing optoelectronic device processes. Low-threshold lasers based on InAs quantum dots have been applied in small batches, and the energy level structure of GaAsSb alloys can be adjusted in a wide range through composition changes. wide open space. [0003] At present, people use antimonide alloys to design many device structures with unique properties, but there are still some factors that limit the development and application of antimonide devices, including poor controllability of the growth components of antimonide alloys, severe segregation during epitaxial growth of antimonides, Antimony elemen...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/20H01L33/00
Inventor 李美成赵宇熊敏
Owner NORTH CHINA ELECTRIC POWER UNIV (BAODING)
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