A core-shell structure n-titanium dioxide@p-cobalt titanate nanocrystalline film and its preparation method
A titanium dioxide, core-shell structure technology, applied in metal material coating process, vacuum evaporation coating, coating and other directions, to achieve the effect of firm bonding, improving sensitivity, and improving gas sensitivity
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[0026] The preparation method of the present invention comprises the following steps:
[0027] (1) Install the cleaned substrate on the sample stage of the magnetron sputtering instrument, CoTiO 3 Target and TiO 2 The targets are respectively installed on two different RF target positions of the magnetron sputtering apparatus.
[0028] (2) Regulation of CoTiO 3 The angle between the normal direction of target sputtering and the substrate normal is 0°~90°, and then adjust the CoTiO 3 The distance between the target and the substrate is between 1cm and 7cm.
[0029] (3) Vacuumize to make the vacuum degree of the sputtering coating chamber reach 1.0×10 -4 Pa~9.9×10 -4 Pa, and then inject Ar gas, so that the working pressure of Ar gas in the sputtering coating chamber is 0.1Pa ~ 2Pa, CoTiO 3 The pre-sputtering of the target takes 5-15 minutes, preferably 10 minutes, and the target power is 100W-400W.
[0030] (4) Set the substrate heating program, the temperature rise rate ...
Embodiment 1
[0035] (1) Install the cleaned substrate on the sample stage, CoTiO 3 Target and TiO 2 The targets are respectively installed on two different RF target positions of the magnetron sputtering apparatus.
[0036] (2) Regulation of CoTiO 3 The angle between the normal direction of target sputtering and the substrate normal is 80°, and the CoTiO 3 The distance between target and substrate is 5cm.
[0037] (3) Vacuumize to make the vacuum degree of the sputtering coating chamber reach 1.0×10 -4 Pa, the working pressure of Ar gas in the sputtering coating chamber is 0.2Pa, CoTiO 3 The target is pre-sputtered for 10 minutes, and the target power supply is 400W.
[0038] (4) Set the substrate heating program, the heating rate is 10°C / min, the temperature is raised to 400°C and kept warm. Then CoTiO 3 The target starts sputtering, the target power is 400W, the sputtering time is 90min, and CoTiO 3 Ordered nanocrystalline films after switching off CoTiO 3 target power.
[0039...
Embodiment 2
[0044] (1) Install the cleaned substrate on the sample stage, CoTiO 3 Target and TiO 2 The targets are respectively installed on two different RF target positions of the magnetron sputtering apparatus.
[0045] (2) Regulation of CoTiO 3 The angle between the normal direction of target sputtering and the substrate normal is 50°, and the CoTiO 3 The distance between the target and the substrate is 1 cm.
[0046] (3) Vacuumize to make the vacuum degree of the sputtering coating chamber reach 1.0×10 -4 Pa, the working pressure of Ar gas in the sputtering coating chamber is 0.5Pa, CoTiO 3 The target is pre-sputtered for 10 minutes, and the target power supply is 300W.
[0047] (4) Set the substrate heating program, the heating rate is 20°C / min, the temperature is raised to 400°C and kept warm. Then CoTiO 3 The target starts sputtering, the target power is 300W, the sputtering time is 90min, and CoTiO 3 Ordered nanocrystalline films after switching off CoTiO 3 target power....
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