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Cleaning process method for etching resistant mask slurry

A process method and anti-corrosion technology, applied in the direction of cleaning methods and appliances, chemical instruments and methods, sustainable manufacturing/processing, etc., can solve problems such as the reduction of minority carrier life, corrosion, and silicon wafer surface corrosion, and achieve the effect of eliminating influence

Inactive Publication Date: 2013-11-06
青岛吉阳新能源有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are many problems in cleaning only with alkaline solution: the cleaning time is short, the mask slurry on the surface of the silicon wafer is not cleaned cleanly, and the anti-corrosion mask slurry remaining on the surface is likely to enter the silicon wafer during the subsequent high-temperature process, causing The minority carrier life is reduced; the cleaning time is long, the surface of the silicon wafer is over-corroded by the alkaline solution, and even the PN junction is completely corroded, both of which will lead to a decrease in the electrical performance of the finished solar cell

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] (1) Alkaline solution bubbling: use bubbling to accelerate the detachment and dissolution of the mask slurry, remove most of the mask slurry, the concentration of the alkali solution (potassium hydroxide, sodium hydroxide or ammonia, etc.) is 3%, ether ( Propylene glycol methyl ether, ethylene glycol ethyl ether or dipropylene glycol dimethyl ether, etc.) concentration is 10%, and the time is 10 seconds;

[0024] (2) Pure water spraying: put the silicon wafer into the pure water spraying tank after cleaning with alkali solution, and quickly remove the residual chemicals on the surface of the silicon wafer by spraying, and the spraying time is 90 seconds;

[0025] (3) Alkaline solution bubbling: use bubbling to accelerate the detachment and dissolution of the mask slurry, remove the residual mask slurry, the concentration of the alkali solution (potassium hydroxide, sodium hydroxide or ammonia, etc.) is 3%, ether ( Propylene glycol methyl ether, ethylene glycol ethyl eth...

Embodiment 2

[0030] (1) Alkaline solution bubbling: use bubbling to accelerate the detachment and dissolution of the mask slurry, remove most of the mask slurry, the concentration of the alkali solution (potassium hydroxide, sodium hydroxide or ammonia, etc.) is 1%, ether ( Propylene glycol methyl ether, ethylene glycol ethyl ether or dipropylene glycol dimethyl ether, etc.) concentration is 10%, and the time is 45 seconds;

[0031] (2) Pure water spraying: put the silicon wafer into the pure water spraying tank after cleaning with alkali solution, and quickly remove the residual chemicals on the surface of the silicon wafer by spraying, and the spraying time is 90 seconds;

[0032] (3) Alkaline solution bubbling: use bubbling to accelerate the detachment and dissolution of the mask slurry, and remove the residual mask slurry. The concentration of the alkali solution is 1%, the concentration of ether is 10%, and the time is 15 seconds;

[0033] (4) Pure water spraying: put the silicon wafe...

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PUM

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Abstract

The invention discloses a cleaning process method for etching resistant mask slurry. The cleaning process method comprises the following steps of: firstly, bubbling an alkali liquor: accelerating the separating and dissolving of the mask slurry by using bubbling and further removing mostly mask slurry; secondly, spraying with pure water: quickly removing chemicals left on the surface of a silicon chip by using a spraying mode; thirdly, bubbling the alkali liquor: accelerating the separating and dissolving of the mask slurry by using bubbling and further removing residual mask slurry; fourthly, spraying with pure water: quickly removing chemicals left on the surface of the silicon chip by using the spraying mode; fifthly, ultrasonic cleaning: carrying out ultrasound by using an alcohol solution to clean off organic matters attached to the surface of the silicon chip; and sixthly, spraying with pure water: quickly cleaning off the chemicals on the surface of the silicon chip by using the spraying mode. Compared with a traditional generally-used cleaning process for the etching resistant mask slurry, the cleaning process method disclosed by the invention can be thoroughly removing the mask slurry and various impurities on the surface of the silicon chip and avoiding the influence on a subsequent process and the performance of a final battery piece caused by the cleaning process.

Description

technical field [0001] The invention relates to a cleaning process method for anti-corrosion mask slurry, which belongs to the field of silicon-based solar cell manufacturing. Background technique [0002] Selective emitter solar cells have become a research hotspot because of their structural advantages and high conversion efficiency. Its structure has two main features: a heavily diffused region with a relatively high doping concentration and a deep junction is formed under and near the metal gate line; a light diffusion region with a relatively low doping concentration and a shallow junction is formed at other positions. This structure can be achieved by re-diffusion, mask printing, etch. First form a heavy diffusion area (square resistance 30-40 ohms) on the surface of the silicon wafer, then print an anti-corrosion mask paste (the pattern is exactly the same as the positive electrode) on the surface of the silicon wafer, and etch the non-masked area by chemical etching...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B08B7/04H01L31/18
CPCY02P70/50
Inventor 孙良欣徐国良郭育林
Owner 青岛吉阳新能源有限公司