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Chemical mechanical polishing solution for TSV (Through Silicon Via) silicon polishing of 3D (Three-Dimensional) packaging

A chemical-mechanical, polishing liquid technology, applied in polishing compositions containing abrasives, electrical components, semiconductor/solid-state device manufacturing, etc., can solve the problems of insufficient removal rate, affecting productivity, etc., making the polishing process easier to control and improve. Yield, the effect of simple ingredients

Inactive Publication Date: 2012-07-04
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the above-mentioned polishing liquid has an obvious insufficient removal rate in the polishing application of 3D sealing technology, which seriously affects the yield

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] The invention provides a chemical mechanical polishing liquid for polishing a TSV silicon substrate of 3D packaging. The present invention uses a strong alkali and abrasive particles as the main components, and simultaneously increases the temperature of the polishing liquid and the polishing machine under alkaline conditions to polish the silicon substrate at an ultra-high speed. The novel chemical mechanical polishing liquid significantly improves the TSV in 3D packaging The rate of silicon polishing.

[0024] Wherein the strong base can be potassium hydroxide, sodium hydroxide, lithium hydroxide, cesium hydroxide, tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, ammonia water, hydroxylamine, ethylene glycol amine, ethanolamine or triethanolamine, etc. The above-mentioned strong bases can be used alone, or multiple strong bases can be used in combination.

[0025] The abrasive particles may be silicon oxide, aluminum oxide...

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Abstract

The invention provides chemical mechanical polishing solution for TSV (Through Silicon Via) silicon polishing of 3D (Three-Dimensional) packaging. The chemical mechanical polishing solution comprises grinding grains, one or more strong bases and water, wherein the mass concentration of the strong bases in the polishing solution is 2-50 percent by weight. The polishing solution is novel chemical mechanical polishing solution through which temperature of the polishing solution and temperature of a polishing machine can be simultaneously increased under the condition of the strong base so as to polish a silicon substrate at an ultrahigh speed; and the yield of TSV silicon polishing in 3D packaging is obviously improved.

Description

technical field [0001] The invention relates to a chemical mechanical polishing liquid, in particular to a chemical mechanical polishing liquid for 3D packaging TSV silicon polishing. Background technique [0002] In the integrated circuit manufacturing process, planarization technology has become one of the indispensable key technologies that are equally important and interdependent with lithography and etching, and the chemical mechanical polishing (CMP) process is currently the most effective and mature planarization technology. technology. The chemical mechanical polishing system is a chemical mechanical planarization technology integrating cleaning, drying, online detection, end point detection and other technologies. Efficiency, cost reduction, and wafer global planarization are necessary technologies. [0003] With the development of science and technology, modern consumer electronic products need to have smaller size and lower manufacturing cost while providing var...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02H01L21/02
Inventor 徐春
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD