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Rapid annealing method for ohmic contact of metal and silicon carbide
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A technology of rapid annealing and ohmic contact, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., to achieve the effects of reducing ohmic contact resistance, improving flexibility, and improving quality
Active Publication Date: 2014-02-05
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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Problems solved by technology
The currently commonly used SiC rapid annealing method still has many defects, and the temperature control method in the heating process still needs to be improved.
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Embodiment 1
[0023] Referring to the accompanying drawings,
[0024] 1) Put the SiC wafer 2 on the Si wafer tray 3 and put it into the rapid heat treatment device 13, place the 3-inch 4H silicon carbide wafer (SiC wafer) 2 to be rapidly annealed on the 4-inch Si wafer tray 3, and then put it into the In the rapid heat treatment device 13, the heating surface 1 of the rapid annealing device is above the SiC wafer 2, the temperature measuring device 4 is below the Si wafer tray 3, and the protective gas Ar is filled at the same time;
[0025] 2) The first heating stage 5, the temperature maintaining stage 6, the SiC wafer 2 is heated for the first time, heated to 200°C, which is the first temperature, maintained at the temperature for 60 seconds, and the heating rate is 5°C / s;
[0026] 3) In the second heating stage 7 and the temperature stabilization stage 8, the temperature of the SiC wafer 2 is raised for the second time, from 200°C to 550°C, which is the second temperature, the temperatu...
Embodiment 2
[0031] Referring to the accompanying drawings,
[0032] 1) Place the 2-inch 6H silicon carbide wafer (SiC wafer) 2 to be rapidly annealed on the 4-inch Si wafer 4, and then put it into the rapid heat treatment device 13. The heating surface 1 of the rapid annealing device is above the silicon carbide wafer. The temperature device 4 is below the Si chip tray 3, filled with protective gas N2;
[0033] 2) The first heating stage 5, the temperature maintaining stage 6, the SiC wafer 2 is heated for the first time, heated to 300°C, which is the first temperature, kept for 180 seconds, and the heating rate is 10°C / s;
[0034] 3) In the second heating stage 7 and the temperature stabilization stage 8, the temperature of the SiC wafer 2 is raised for the second time, from 200°C to 600°C, which is the second temperature, the temperature is stabilized for 60 seconds, and the heating rate is 20°C / s;
[0035] 4) In the third heating stage 9, the SiC wafer 2 is heated for the third time, ...
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Abstract
The invention provides a rapid annealing method for ohmic contact of metal and siliconcarbide, which comprises the steps of (1) placing SiC wafers on a Si sheet tray, then arranging the Si sheet tray on a rapid thermal treatment device, and simultaneously filling the device with protection gas Ar; (2) performing a first temperature-rise period, and keeping the temperature; (3) performing a second temperature-rise period, and steadying the temperature; (4) performing a third temperature-rise period; (5) performing a fourth temperature-rise period, namely, annealing period; and (6) performing a temperature reducing period. The method has benefits as follows: the method is carried out in the commercial rapid thermal treatment device taking any light radiation as a heat source; and the silicon sheet used as the tray can adopt various standards of commercial polishingmonocrystalline silicon sheets and has low cost. The annealing method can remove the moisture on the surface of the siliconcarbidewafer and stabilize the temperature. On the premise of ensuring the control precision of the peak thermal treatment temperature, the heating rate is improved through changing the setting value. Finally, the annealed ohmic contact resistance is reduced; and the quality of the ohmic contact, the device reliability and the yield are improved.
Description
technical field [0001] The invention relates to a rapid annealing method, in particular to a metal-silicon carbide ohmic contact rapid annealing method. Background technique [0002] Siliconcarbide (SiC) material is the third-generation wide-bandgap semiconductor material developed after the first-generation elemental semiconductor material (Si) and the second-generation compound semiconductor material (GaAs, GaP, InP, etc.). Due to the characteristics of wide band gap, high critical breakdown electric field, high thermal conductivity, and high electron saturation drift velocity, SiC materials are especially suitable for making microwave high-power, high-voltage, high-temperature, and radiation-resistant electronic devices, and have a wide range of applications in all aspects of the national economy. application. At present, the development of SiC devices has become a research hotspot. [0003] One of the key processes in the preparation of SiC devices is to realize the o...
Claims
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Application Information
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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/04H01L21/28
Inventor 李理柏松陈刚
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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