Method for growing nitride light-emitting diode (LED) epitaxial structure
A technology of epitaxial structure and growth method, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., and can solve problems such as unsatisfactory effects
Inactive Publication Date: 2012-07-11
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology
However, the effect is still not ideal, and the electrical properties of nitride light-emitting diodes need to be further improved.
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[0018] see figure 2 As shown, the present invention provides a method for growing a nitride LED epitaxial structure, comprising the following steps:
[0019] Step 1: Using MOCVD technology, the substrate 21 is heat treated in the MOCVD reaction chamber: under the hydrogen atmosphere, the temperature is maintained at 1100-1180° C., the baking is continued for 600-2000 seconds, and then the temperature is lowered. The MOCVD technology used here is to use ammonia as the nitrogen source, nitrogen or hydrogen as the carrier gas, trimethylgallium or triethylgallium, trimethylindium and trimethylaluminum as the gallium source, indium source and trimethylaluminum respectively. Aluminum source; silane is an N-type dopant, and magnesocene is a P-type dopant. Wherein the material of the substrate 21 is sapphire, silicon carbide, silicon, gallium arsenide, zinc oxide or lithium aluminate, wherein the substrate 21 is a planar substrate or a regular or irregularly shaped graphic lining is...
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Abstract
The invention discloses a method for growing a nitride light-emitting diode (LED) epitaxial structure. The method comprises the following steps of: 1, performing thermal treatment on a substrate in a metal organic chemical vapor deposition (MOCVD) reaction chamber by an MOCVD technology and cooling; 2, growing a nitride nucleation layer on the substrate; 3, annealing to form the crystal of the nucleation layer on the surface of the substrate; 4, growing an unintentionally doped gallium nitride layer on the crystallized nitride nucleation layer; 5, growing a gallium nitride stress control layer on the unintentionally doped gallium nitride layer; and 6, sequentially growing an N-type gallium nitride layer, an active layer and a P-type gallium nitride layer on the gallium nitride stress control layer, and thus obtaining a complete LED epitaxial structure. By the method, the epitaxial quality of an LED can be improved, stress caused by lattice mismatching in an epitaxial layer can be modulated, the problem of electricity leakage of the LED can be effectively solved, and the static electricity resistance of the LED can be effectively improved.
Description
technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a method for growing a nitride LED epitaxial structure. Background technique [0002] Light-emitting diodes have the advantages of energy saving, environmental protection, and long life. With the attention and promotion of governments in various countries, they have been widely used in LCD backlights, outdoor displays, landscape lighting, and general lighting, and have launched another revolution in the history of human lighting. [0003] refer to figure 1 , is a schematic diagram of the epitaxial structure of a conventional nitride light-emitting diode. On a sapphire substrate 11, a nucleation layer 12, an unintentionally doped gallium nitride layer 13, an N-type gallium nitride layer 14, an active layer 15 and a P-type gallium nitride layer 16 are sequentially grown; image 3 It is the initial temperature curve and reflectance curve of the traditional growth nitride li...
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IPC IPC(8): H01L33/00
Inventor 梁萌李鸿渐姚然李志聪李盼盼王兵李璟伊晓燕王军喜王国宏李晋闽
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI