Reflective optical element and method for operating an EUV lithography apparatus

A technology of reflective optics and lithography equipment, which is applied in the direction of optical components, microlithography exposure equipment, and originals for photomechanical processing, etc., which can solve the pollution of cleaning units, cleaning without cleaning methods, and the reduction of optical effective surface reflectivity, etc. question

Inactive Publication Date: 2012-07-11
CARL ZEISS SMT GMBH
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Problems solved by technology

[0006] But it has been found that cleaning cells can also lead to contamination, especially from metals that originate primarily from the cleaning cells themselves or that are extracted from materials or components in EUV lithography equipment during chemical reactions with atomic hydrogen (especially as volatile metals Hydride)
[0007] Moreover, it has been found that the interaction of contamination in the form of silicon compounds with EUV radiation leads to the formation of silicon dioxide (SiO 2 ), due to their good adhesion on the top layer of optically active surfaces composed of e.g. ruthenium, they cannot be cleaned by atomic hydrogen or other cleaning means and lead to a considerable reduction in the reflectivity of the optically active surface

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  • Reflective optical element and method for operating an EUV lithography apparatus
  • Reflective optical element and method for operating an EUV lithography apparatus
  • Reflective optical element and method for operating an EUV lithography apparatus

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Embodiment Construction

[0033] figure 1 An EUV lithography apparatus 10 is schematically shown. The main components are beam shaping system 11 , illumination system 14 , photomask 17 and projection system 20 . The EUV lithography apparatus 10 operates under vacuum conditions so that EUV radiation is absorbed as little as possible inside it.

[0034] The beam shaping system 11 comprises a radiation source 12, a collimator 13b and a monochromator 13a. For example, a plasma light source or a synchrotron can be used as radiation source 12 . Radiation in the wavelength range of approximately 5 nm to 20 nm is firstly concentrated into a collimator 13b. Furthermore, the desired operating wavelength is filtered out by the monochromator 13a. In the mentioned wavelength ranges, the collimator 13b and the monochromator 13a are usually implemented as reflective optical elements. In the case of collimators, a distinction is made between so-called normal-incidence collimators and so-called grazing-incidence c...

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Abstract

In order to reduce the adverse influence of contamination composed of silicon dioxide, hydrocarbons and / or metals within an EUV lithography apparatus on the reflectivity, a reflective optical element (50) for the extreme ultraviolet wavelength range having a reflective surface (59) is proposed, wherein the multilayer coating of the reflective surface (59) has a topmost layer (56) composed of a fluoride. The contaminations mentioned, which deposit on the reflective optical element (50) during the operation of the EUV lithography apparatus, are converted into volatile compounds by the addition of at least one of the substances mentioned hereinafter: atomic hydrogen, molecular hydrogen, perfluorinated alkanes such as e.g. tetrafluoromethane, oxygen, nitrogen and / or helium.

Description

technical field [0001] The invention relates to a reflective optical element with a reflective surface for use in the extreme ultraviolet (EUV) wavelength range. Furthermore, the invention relates to a method for operating an EUV lithographic apparatus comprising a reflective optical element having a reflective surface. Furthermore, the present invention relates to an EUV lithographic apparatus comprising reflective optical elements, to an illumination system comprising reflective optical elements, in particular for EUV lithographic apparatus, and to an illumination system, in particular for EUV lithographic apparatus, comprising reflective Projection system for optical elements. Background technique [0002] In EUV lithography equipment, reflective optical elements for the extreme ultraviolet (EUV) wavelength range (e.g., wavelengths between approximately 5 nm and 20 nm) are used for lithographic imaging of semiconductor components, the reflective optical elements being ph...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20G21K1/06G02B5/08
CPCB82Y10/00G02B5/0825G03F7/70958G03F1/24G03F7/70316G03F7/70916G02B5/0891G03F7/70941B82Y40/00G21K1/062G21K2201/061G03F7/70983G21K2201/067G03F7/70925G03F7/20G21K1/06G02B5/08
Inventor D.H.埃姆A.多科纳尔G.冯布兰肯哈根
Owner CARL ZEISS SMT GMBH
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