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Method for thermally contacting opposing electrical connections of a semiconductor component arrangement

A semiconductor and electrical connection technology, applied in the field of producing semiconductor modules, can solve the problems of insufficient thermal contact of laser diode bars, low light maximum power, low photoelectric conversion efficiency, etc.

Active Publication Date: 2012-07-11
JENOPTIK LASER
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The disadvantage of this method is the insufficient thermal contact of the laser diode bar, which is reflected in the too low photoelectric conversion efficiency and the too low maximum optical power
[0007] Another disadvantage of this method is the need to provide fixed tools to ensure that the friction lock connection in the diode laser assembly is not only to form the connection but also to maintain the friction lock connection, and must maintain

Method used

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  • Method for thermally contacting opposing electrical connections of a semiconductor component arrangement
  • Method for thermally contacting opposing electrical connections of a semiconductor component arrangement
  • Method for thermally contacting opposing electrical connections of a semiconductor component arrangement

Examples

Experimental program
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Effect test

no. 1 example

[0081] According to a first embodiment of the method of the present invention, a first heat conductor 20 made of copper and a second heat conductor 30 made of copper are provided for producing a diode laser component. The exteriors of the first heat conductor 20 and the second heat conductor 30 are coated with nickel and gold layers. The first heat conductor 20 has a first connection portion 26 , a first contact portion 25 , and a first connection surface 21 . The second heat conductor 30 has a second connection portion 36 , a second contact portion 35 , and a second connection surface 31 . The first indium layer 51 is coated on the first connection surface 21 , and the second indium layer 52 is coated on the second connection surface 31 .

[0082] The first heat-conducting body 20 is oriented relative to the second heat-conducting body 30 in a second method step such that the first connection surface 21 and the second connection surface 31 are opposite each other ( Figure 1...

no. 2 example

[0093] Different from the first embodiment, this embodiment does not carry out double-sided clamping to produce the diode laser assembly of the second embodiment. After the epitaxial side 11 of the laser diode bar 10 has been soldered on the first heat conductor 20, only the laser One side (substrate side) of the diode bar 10 is clamped.

[0094] The first heat conductor 20 , formed from the outer silver-diamond composite core, has a manufacturable copper layer at least on the laser diode bar 10 and on the side facing away from the laser diode bar 10 in order to produce a smooth connection surface. The silver and diamond of the first heat conductor are in a mixing ratio in which the first heat conductor 20 and the coefficient of thermal expansion are given only 0.5 to 1.5 ppm / K greater than the coefficient of thermal expansion of the laser diode bar 10 . Thus, low-stress epi-side brazing of the laser diode bar 10 on the heat conductor 20 is possible. To this end, in a first m...

no. 3 example

[0097] A laser diode 10 having a laser 13a is used as a laser diode module in the third embodiment. because Figure 3a The length of the resonator in the depth direction of the laser diode 10 is greater than the width of the laser diode 10, advantageously, the heat is spread to the left or right side parallel to the contact surfaces 11 and 12 of the laser diode 10, and perpendicular to the resonator direction or the light emission direction 15 sides. In this sense, each of the first heat conducting body 20 and the second heat conducting body 30 has two opposite connection portions 26 and 36 between the respective contact portions 25 and 35 , one on the left and one on the right.

[0098] The connection surfaces 21 and 31 of the contact parts 25 and 35 are passed through a suitable method in vacuum to remove the natural aluminum oxide layer with the heat conductors 20 and 30 made of aluminum. Then, without being subjected to the atmosphere around oxygen, the contact surfaces ...

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PUM

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Abstract

The invention relates to thermally contacting a semiconductor component arrangement (10 / 40), wherein at least one (20 / 30) of two heat conducting bodies (20, 30) disposed on opposite sides of the semiconductor component arrangement (10 / 40) is brought into contact with a contact surface (12 / 46) of the semiconductor component arrangement (10 / 40) by means of a metal layer (52) under the application of a force (53), wherein the metal layer (52) melts during solidification of a locking agent, forming an adhesive bond between the two heat transfer bodies (20, 30) over the entire region thereof.

Description

technical field [0001] The invention relates to a method for producing a semiconductor module, eg a diode laser module, wherein the electrical connection of the semiconductor module device, eg a laser diode bar, is a thermal contact. Background technique [0002] The method of thermal and electrical contacting of both sides of the laser diode bar has been taken from the project "Comparative performance study of diode laser bars encapsulated by indium and gold tin" from Dirk Lorenzen et al. It is known, wherein, in each case, a copper electrical and thermal conductor formed as a cooling element is soldered to each opposite electrical contact surface of the laser diode bar by means of an indium solder. [0003] The advantage of this method is that only a small number of components are required to produce diode laser components. The use of affordable and highly thermally conductive heat conductor materials is also advantageous. The disadvantage of this approach is the mechani...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/02H01S5/024H01S5/40
CPCH01S5/405H01S5/02272H01S5/02492H01S5/02264H01S5/4031H01S5/4025H01S5/02365H01S5/0237
Inventor 马特思亚斯·萧罗德尔多明尼·萧罗德尔佩翠拉·赫灵格
Owner JENOPTIK LASER