Method for thermally contacting opposing electrical connections of a semiconductor component arrangement
A semiconductor and electrical connection technology, applied in the field of producing semiconductor modules, can solve the problems of insufficient thermal contact of laser diode bars, low light maximum power, low photoelectric conversion efficiency, etc.
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no. 1 example
[0081] According to a first embodiment of the method of the present invention, a first heat conductor 20 made of copper and a second heat conductor 30 made of copper are provided for producing a diode laser component. The exteriors of the first heat conductor 20 and the second heat conductor 30 are coated with nickel and gold layers. The first heat conductor 20 has a first connection portion 26 , a first contact portion 25 , and a first connection surface 21 . The second heat conductor 30 has a second connection portion 36 , a second contact portion 35 , and a second connection surface 31 . The first indium layer 51 is coated on the first connection surface 21 , and the second indium layer 52 is coated on the second connection surface 31 .
[0082] The first heat-conducting body 20 is oriented relative to the second heat-conducting body 30 in a second method step such that the first connection surface 21 and the second connection surface 31 are opposite each other ( Figure 1...
no. 2 example
[0093] Different from the first embodiment, this embodiment does not carry out double-sided clamping to produce the diode laser assembly of the second embodiment. After the epitaxial side 11 of the laser diode bar 10 has been soldered on the first heat conductor 20, only the laser One side (substrate side) of the diode bar 10 is clamped.
[0094] The first heat conductor 20 , formed from the outer silver-diamond composite core, has a manufacturable copper layer at least on the laser diode bar 10 and on the side facing away from the laser diode bar 10 in order to produce a smooth connection surface. The silver and diamond of the first heat conductor are in a mixing ratio in which the first heat conductor 20 and the coefficient of thermal expansion are given only 0.5 to 1.5 ppm / K greater than the coefficient of thermal expansion of the laser diode bar 10 . Thus, low-stress epi-side brazing of the laser diode bar 10 on the heat conductor 20 is possible. To this end, in a first m...
no. 3 example
[0097] A laser diode 10 having a laser 13a is used as a laser diode module in the third embodiment. because Figure 3a The length of the resonator in the depth direction of the laser diode 10 is greater than the width of the laser diode 10, advantageously, the heat is spread to the left or right side parallel to the contact surfaces 11 and 12 of the laser diode 10, and perpendicular to the resonator direction or the light emission direction 15 sides. In this sense, each of the first heat conducting body 20 and the second heat conducting body 30 has two opposite connection portions 26 and 36 between the respective contact portions 25 and 35 , one on the left and one on the right.
[0098] The connection surfaces 21 and 31 of the contact parts 25 and 35 are passed through a suitable method in vacuum to remove the natural aluminum oxide layer with the heat conductors 20 and 30 made of aluminum. Then, without being subjected to the atmosphere around oxygen, the contact surfaces ...
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