Preparation method of nickel nanometer particle/silicon nanometer wire magnetic composite material

A technology of magnetic composite materials and silicon nanowires, applied in the direction of magnetic materials, nanomagnetism, magnetic objects, etc., can solve the problems of high cost, harsh preparation conditions, high repeatability, etc., and achieve low cost, simple preparation method, high reproducible effect

Inactive Publication Date: 2012-07-18
EAST CHINA NORMAL UNIV
View PDF3 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a method for preparing a nickel nanoparticle / silicon nanowire magnetic composite material, to solve the problem of harsh preparation conditions and high cost of the existing magnetic composite material, and to provide a method with low environmental requirements, simple method, and low cost. Cost, high reproducibility, new method suitable for large-scale industrial production

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of nickel nanometer particle/silicon nanometer wire magnetic composite material
  • Preparation method of nickel nanometer particle/silicon nanometer wire magnetic composite material
  • Preparation method of nickel nanometer particle/silicon nanometer wire magnetic composite material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0035] a) Wafer cleaning

[0036] Take a 1cm×1cm silicon wafer (p-type, double-sided polishing, crystal orientation, resistivity 0.1-10Ω·cm), clean the silicon wafer with standard RCA cleaning steps and dry it with nitrogen gas for later use.

[0037] b) Preparation of silicon wafer chemical etching solution

[0038] Configure 25 mmol L -1 AgNO 3 , hydrofluoric acid (40% HF concentration) mixed solution (25 mmol L -1 AgNO 3 and concentration of 40% HF (volume ratio 1:1) 200 mL, sonicate to make the mixed solution evenly distributed.

[0039] c) Chemical etching of silicon wafers to prepare silicon nanowires

[0040] The silicon chip undergoes a chemical replacement reaction in the chemical etching solution, and the surface of the silicon chip is etched to form a silicon nanowire structure. vertically) into the solution (the silicon wafer is completely submerged in the solution), ensuring that the etching rate on both sides of the silicon wafer is the same, the reaction ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
lengthaaaaaaaaaa
electrical resistivityaaaaaaaaaa
Login to view more

Abstract

The invention discloses a preparation method of a nickel nanometer particle/silicon nanometer wire magnetic composite material, comprising the steps of: developing a silicon nanometer wire on a silicon wafer; and then depositing nickel nanometer particles on the silicon nanometer wire to obtain the nickel nanometer particle/silicon nanometer wire magnetic composite materials; the nickel nanometer particles of the material are spherical nanometer particles with uniform size, and the diameters of the nickel nanometer particles are 35-40 nm; the nickel nanometer particles are singly dispersed on the surface of the silicon nanometer wire with a diameter of 20-300 nm and a length of 70-75 microns and are independent to each other without interference; and the nickel nanometer particles have the magnetic characteristics such as high blocking temperature (370 K), high coercive force and low saturation magnetization intensity and the like (when the blocking temperature is 5 K, the saturation magnetization intensity is 4.5 emu/g, and the coercive force is 375.3 Oe; and when the blocking temperature is 400 K, the saturation magnetization intensity is 2.6 emu/g, and the coercive force is 33.3 Oe). The preparation method is simple, low in cost, high in repeatability, low in requirement for preparation environment and suitable for large-scale industrial production. The prepared nickel nanometer particle/silicon nanometer wire magnetic composite material can be applied to the fields of magnetic nanometer materials, nanometer magnetic storage and the like.

Description

technical field [0001] The invention relates to the technical fields of magnetic nanomaterials and nanomagnetic storage, in particular to a method for preparing a nickel nanoparticle / silicon nanowire magnetic composite material. Background technique [0002] Magnetic nanoparticles can be widely used in many fields, such as: magnetic fluid, catalysis, biotechnology / medicine, magnetic resonance imaging, data storage and environmental engineering, etc. Since there are a large number of paramagnetic defects on the surface of silicon nanowires, magnetic nanoparticles are deposited on the surface of silicon nanowires with paramagnetic defects to form a magnetic composite material, which will exhibit new magnetic characteristics. At present, the preparation process of this kind of magnetic composite materials is relatively complicated, the preparation conditions are harsh, and the cost is high. Contents of the invention [0003] The purpose of the present invention is to provide...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01F1/00B82Y30/00B82Y25/00B82Y40/00
Inventor 王志亮陈雪皎朱美光陈云严强张健
Owner EAST CHINA NORMAL UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products