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CMOS TDI sensor

An oxide semiconductor and time-delay technology, applied in the direction of TV, color TV parts, TV system parts, etc., can solve the problem of reducing the service life and avoid X-ray radiation damage

Active Publication Date: 2012-07-25
X SCAN IMAGING CORP
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  • Abstract
  • Description
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AI Technical Summary

Problems solved by technology

This cumulative radiation exposure of the CCD sensor under X-rays increases its dark current, shifts its well potential, and thus reduces its useful life

Method used

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Embodiment Construction

[0023] Figure 1 to Figure 4 A preferred embodiment of the present invention will be described. figure 1 A circuit diagram of a time delay and integrate (TDI) stage 100 is shown. figure 2 A circuit diagram showing a pixel of a linear detector with N time delay and integration stages. For an M pixel array, it includes M rows of circuits, as in figure 2 displayed in . image 3 Block diagram showing the correlated double sample and hold difference amplifier for reading the signal at the final time delay and integration stage. Figure 4 Timing diagrams are shown for operating time-delayed and integrating sensors.

[0024] as in figure 1As shown in , each time delay and integration stage 100 includes: a photodiode 101 , a summing capacitor 102 , an integrating and summing amplifier 103 , and a correlated double sampling and holding circuit 104 . The integrating and summing amplifier 103 includes: an amplifier A1, an integrating capacitor C1, and a reset switch SW1. An inte...

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Abstract

The invention discloses a Complementary Metal Oxide Semi-conductor (CMOS) Time Delay and Integration (TDI) detector formed through M pixels, each detector pixel contains N stages of WI locations. Each TDI includes an LED collecting light load and a pre-amplifier proportionally converts the photo-charge to a voltage. Each TDI stage includes a group of capacitors, an amplifier, and a swich for storing integrated signal voltages, as well as a correlated double sample (CDS) technology (real or pseudo) to maintain the light signals and the reseting voltage.The CMOS TDI structure can be used for implementing X-ray scanning detector systems requiring large pixel sizes and signal processing circuitry that is physically separated from the photodiode array for X-ray shielding.

Description

technical field [0001] The present invention relates to the field of solid state image sensors, and more particularly to a complementary metal oxide semiconductor (CMOS) time delay and integration (TDI) sensor for X-ray image scanning applications. Background technique [0002] The present invention relates to time-delay and integration (TDI) complementary metal-oxide-semiconductor (CMOS) linear image sensors suitable for high-speed X-ray image scanning applications. Typically time-delay and integrating image sensors are used in high-speed line scan applications where the integrating input light signal is very low. In normal line scan applications, one way to increase the integration of the input light signal is to reduce the scan speed and thus increase the integration time. This time delay and integrating sensor allows line scan detector systems to increase the light signal without sacrificing scan rate. This time delay and integration sensor uses a charge transfer devic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04N5/374H04N5/378H04N25/00
CPCH04N5/378H04N5/3743H04N5/32H04N25/768H04N23/30
Inventor 王勤立李世祖
Owner X SCAN IMAGING CORP
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