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Heat sink for electronic device, and process for production thereof

A technology for electronic equipment and manufacturing methods, applied in metal processing equipment, chemical instruments and methods, cooling/ventilation/heating transformation, etc., can solve problems such as rising material costs, and achieve the effect of excellent thermal conductivity and thin thickness

Active Publication Date: 2012-07-25
JFE PRECISION CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to form a Cu layer free from defects caused by such shrinkage cavities, it is necessary to increase the thickness of the Cu layer, but increasing the thickness of the Cu layer may lead to an increase in material cost.

Method used

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  • Heat sink for electronic device, and process for production thereof
  • Heat sink for electronic device, and process for production thereof
  • Heat sink for electronic device, and process for production thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0097] The Cr-Cu alloy sheet was cold-rolled and cross-rolled so that the rolling ratio in both rolling directions was the same, and the thickness was reduced to 0.05mm (rolling ratio: 98.3%), thereby obtaining a Cr-Cu alloy sheet . A size of 65 mm square was cut out from this rolled plate. Two sheets of the rolled Cr-Cu alloy plate are stacked to form 4 layers and 5 sheets of pure copper (the same size as the Cr-Cu alloy material and thickness: 0.1mm) are stacked according to the pure copper sheet (1 sheet), The order of Cr-Cu alloy plates (2 stacked into a group) is alternately stacked, passed through a spark plasma sintering (SPS) device [DR. And diffusion bonding was carried out under the condition of a pressure of 20 MPa to obtain a Cr-Cu alloy / Cu laminated body.

[0098] It was confirmed that the thermal conductivity in the thickness direction was 230 W when the test piece cut out from the obtained diffusion bonded plate was heat-treated at 600°C (holding time: 120 min...

Embodiment 2

[0103] The Cr-Cu alloy plate is cold rolled to a thickness of 0.10mm (rolling rate: 96.7%) to obtain a Cr-Cu alloy plate. The rolled Cr-Cu alloy plate is 4 pieces, and the pure copper plate (1 sheets) and Cr—Cu alloy plates (one sheet) were stacked alternately in this order, and a Cr—Cu alloy / Cu laminate was obtained in the same manner as in Example 1.

[0104]It was confirmed that the thickness The thermal conductivity in the direction is 230W / mK, and the thermal conductivity in the surface direction is 298W / mK, which has excellent heat dissipation. In addition, the average thermal expansion rate at 50~900°C is 12.5×10 -6 / K, and still obtain a thermal expansion rate that does not hinder the brazing joint.

Embodiment 3

[0106] The Cr-Cu alloy plate is cold rolled to a thickness of 0.15mm (rolling rate: 95.0%) to obtain a Cr-Cu alloy plate. The rolled Cr-Cu alloy plate is 4 pieces, and the pure copper plate (1 sheets) and Cr—Cu alloy plates (one sheet) were stacked alternately in this order, and a Cr—Cu alloy / Cu laminate was obtained in the same manner as in Example 1.

[0107] It was confirmed that the thickness The thermal conductivity in the direction is 195W / mK, and the thermal conductivity in the surface direction is 280W / mK, which has excellent heat dissipation. In addition, the average thermal expansion rate at 50~900°C is 11.6×10 -6 / K, and still obtain a thermal expansion rate that does not hinder the brazing joint.

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Abstract

Disclosed is a heat sink for an electronic device, produced by joining a Cr-Cu alloy sheet comprising a Cu matrix and more than 30 mass% and not more than 80 mass% of Cr to a Cu sheet, and rolling the joined product, thereby producing a laminate having a Cr-Cu alloy layer and a Cu layer. The heat sink for an electronic device has low heat expansion properties, excellent heat conductivity particularly in the direction of thickness, and a reduced entire thickness.

Description

technical field [0001] The present invention relates to a suitable heat sink (heat sink material) used for rapidly dissipating heat generated from a heat generating body such as a semiconductor element mounted in an electronic device and a manufacturing method thereof, and particularly relates to the realization of low thermal expansion coefficient and high thermal conductivity An advantageous improved heat sink for electronic equipment and a manufacturing method thereof. Background technique [0002] High-output power semiconductor components are used in inverters of hybrid vehicles and the like, and demand has rapidly increased in recent years. [0003] In this power semiconductor component, a semiconductor is usually bonded to a ceramic substrate. As ceramic substrates, there are known laminated substrates (DBC substrates) obtained by metallizing alumina ceramics with copper (DBC substrates) or laminated substrates obtained by metallizing aluminum nitride with aluminum (...

Claims

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Application Information

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IPC IPC(8): H01L23/373
CPCC22C27/06B22F3/26B22F7/02C22C1/0425C22F1/08H01L23/3735C22F1/11B22F1/0055C22C1/045H01L23/473C22C30/02C22F1/18B22F2007/045B21B3/00B32B15/01C22C9/00B22F7/04H01L23/3736H01L2224/32225H05K7/20H01L23/36H01L23/373
Inventor 寺尾星明小日置英明
Owner JFE PRECISION CORP
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